journal article·2017-06-01Open access

Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate

Lan Liu, Xudong Wang, Li Han, Bobo Tian, Yan Chen, Guangjian Wu, Dan Li, Mengge Yan, Tao Wang, Shuo Sun, Hong Shen, Tie Lin, Jinglan Sun, Chungang Duan, Jianlu Wang, Xiangjian Meng, Junhao Chu

AIP Advances· Volume 7· Issue 6

Abstract

The characteristics of MoS2-nanoflake field-effect transistors (FETs) were studied by analyzing the transfer curves in MoS2-FETs with ferroelectric and general polymers as the gate dielectric. A clear hysteresis, opposite to the electron trapping–detrapping effect in traditional MoS2-FETs, was observed in the MoS2-FETs with ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] films. The effect carrier mobility of MoS2 nanoflakes reached approximately 95.6 cm2/Vs under the control of the polarization field of P(VDF-TrFE), whereas the effect carrier mobility was only approximately 15.3 cm2/Vs in MoS2-FETs with traditional dielectric poly(methyl methacrylate) (PMMA) films. Furthermore, the ferroelectric MoS2-FETs possess a higher ON/OFF resistance ratio (approximately 107) than do the PMMA MoS2-FETs (approximately 105).
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Research context

OpenAlex topics: 2D Materials and Applications · Advanced Sensor and Energy Harvesting Materials · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, Shanghai Normal University 1 , No. 100 Guilin Road, Shanghai 200234, China

National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences 2 , No. 500 Yutian Road, Shanghai 200083, China

Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University 3 , No. 500 Dongchuan Road, Shanghai 200241, China

University of Chinese Academy of Sciences 4 , No. 19A Yuquan Road, Beijing 100049, China

Funding

Key research project of frontier science of CAS · Shanghai sailing program · the National postdoctoral program for innovative talents · National Natural Science Foundation of China · Science and Technology Commission of Shanghai Municipality

References (45)

Show source-provided references
1. Science · 2004 · 306 · 66610.1126/science.1102896 ↗
2. Science · 2011 · 334 · 64810.1126/science.1211384 ↗
3. Nat. Nanotechnol. · 2009 · 4 · 83910.1038/nnano.2009.292 ↗
4. Science · 2007 · 317 · 63810.1126/science.1144657 ↗
5. Science · 2012 · 336 · 114010.1126/science.1220527 ↗
6. Science · 2011 · 335 · 94710.1126/science.1218461 ↗
7. Nat. Nanotechnol. · 2011 · 6 · 14710.1038/nnano.2010.279 ↗
8. Nat. Photonics · 2012 · 6 · 74910.1038/nphoton.2012.262 ↗
9. Nat. Nanotechnol. · 2014 · 9 · 67610.1038/nnano.2014.150 ↗
10. Nat. Nanotechnol. · 2015 · 10 · 70710.1038/nnano.2015.112 ↗
11. Nat. Nanotechnol. · 2014 · 9 · 78010.1038/nnano.2014.215 ↗
12. Nat. Nanotechnol. · 2014 · 9 · 26210.1038/nnano.2014.25 ↗
13. Phys. Rev. Lett. · 2010 · 105 · 13680510.1103/physrevlett.105.136805 ↗
14. ACS Nano · 2010 · 4 · 269510.1021/nn1003937 ↗
15. ACS Nano · 2014 · 8 · 7047
16. Nat. Nanotechnol. · 2013 · 8 · 49710.1038/nnano.2013.100 ↗
17. ACS Nano · 2012 · 6 · 7410.1021/nn2024557 ↗
18. Nano Lett. · 2012 · 12 · 369510.1021/nl301485q ↗
19. Adv. Mater. · 2012 · 24 · 583210.1002/adma.201201909 ↗
20. Appl. Phys. Lett. · 2013 · 102 · 04210410.1063/1.4789365 ↗
21. Adv. Funct. Mater. · 2017
22. Small · 2015 · 11 · 593210.1002/smll.201501260 ↗
23. Adv. Mater. · 2015 · 27 · 657510.1002/adma.201503340 ↗
24. Phase Transitions: A Multinational Journal · 1989 · 18 · 14310.1080/01411598908206863 ↗
25. Appl. Phys. Lett. · 2015 · 106 · 09290210.1063/1.4913968 ↗
26. Appl. Phys. Lett. · 2013 · 102 · 07290610.1063/1.4793188 ↗
27. Appl. Phys. Lett. · 2014 · 104 · 08290310.1063/1.4866441 ↗
28. Solid State Electron. · 2008 · 52 · 5310.1016/j.sse.2007.07.007 ↗
29. J. Appl. Phys. · 2010 · 108 · 10281010.1063/1.3511697 ↗
30. Phys. Chem. Chem. Phys. · 2016 · 18 · 1216310.1039/c6cp01087c ↗
31. Appl. Phys. Lett. · 2014 · 105 · 09310710.1063/1.4894865 ↗
32. ACS Nano · 2013 · 7 · 775110.1021/nn402348r ↗
33. Appl. Phys. Lett. · 2015 · 106 · 10310910.1063/1.4914968 ↗
34. Appl. Phys. Lett. · 2016 · 108 · 08310210.1063/1.4942406 ↗
35. Nanoscale · 2016 · 8 · 304910.1039/c5nr07336g ↗
36. Phys. Rev. · 1967 · 163 · 74310.1103/physrev.163.743 ↗
37. ACS Nano · 2011 · 5 · 770710.1021/nn202852j ↗
38. Phys. Rev. Lett. · 2007 · 98 · 13680510.1103/physrevlett.98.136805 ↗
39. Nat. Mater. · 2013 · 12 · 81510.1038/nmat3687 ↗
40. 2D Mater. · 2017 · 4 · 02503610.1088/2053-1583/aa5c17 ↗
41. Nanotechnology · 2016 · 27 · 36400210.1088/0957-4484/27/36/364002 ↗
42. Nano Lett. · 2012 · 12 · 467410.1021/nl302015v ↗
43. ACS Nano · 201710.1021/acsnano.7b00113 ↗
44. Nanotechnology · 2013 · 24 · 38200110.1088/0957-4484/24/38/382001 ↗
45. Nat. Mater. · 2017 · 16 · 10110.1038/nmat4756 ↗