AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Silicon Carbide Semiconductor Technologies
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Affiliations
College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University 1 , Shenzhen 518060, People’s Republic of China
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS 2 , Suzhou 215123, People’s Republic of China
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University 3 , Hsinchu 300, Taiwan
Department of Electrical and Computer Engineering, National University of Singapore 4 , 117583, Singapore
Department of Microelectronics, Fudan University 5 , Shanghai 200433, People’s Republic of China
School of Microelectronics, Xidian University 6 , Xi’an 710071, People’s Republic of China
Funding
National key research and development plan