Design considerations for three-dimensional betavoltaics
Source abstract
Abstract
Betavoltaic devices are suitable for delivering low-power over periods of years. Typically, their power density is on the order of nano to micro-Watts per cubic centimeter. In this work we evaluate the potential for using high-aspect ratio three-dimensional semiconductor structures to enhance the power and efficiency of these devices. The Monte Carlo transport code MCNP6 is used to provide realistic estimates of the theoretical levels of charge generation, which is in turn used to make predictions about the power output from three-dimensional betavoltaics. The focus of this work is on silicon and promethium-147, but other semiconductors and radioisotopes are considered as well. In the case of silicon diodes with three-dimensional features that are comparable to what is commercially available we estimate that power densities in the range of 20-25 mW/cm3 can be achieved at efficiencies of 2.9-5.8% when coupled with promethium-147 oxide.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Energy Technologies and Civil Engineering Innovations · Advanced Materials and Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Lawrence Livermore National Laboratory , 7000 East Ave., Livermore, California 95440, USA
Funding
Lawrence Livermore National Laboratory
References (60)
Show source-provided references
1. The electron voltaic effect10.1088/0370-1298/64/4/109 ↗
2. The electron-voltaic effect in p-n junctions induced by beta-particle bombardment10.1103/PhysRev.93.246.2 ↗
3. A review of nuclear batteries10.1016/j.pnucene.2014.04.007 ↗
4. 2014
5. Mechanisms leading to losses in conventional betavoltaics and evolution: Utilizing composite semiconductor with infused radioisotope for efficiency improvement10.1109/jmems.2013.2288523 ↗
6. Demonstration of a 4H SiC betavoltaic cell10.1063/1.2166699 ↗
7. Demonstration of a radiation resistant, high efficiency SiC betavoltaic10.1063/1.2172411 ↗
8. High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes10.1063/1.4939203 ↗
9. 3D silicon betavoltaics microfabricated using a self-aligned process for 5 milliwatt/cc average, 5 year lifetime microbatteries
10. Betavoltaic microbatteries using porous silicon
11. Quantitative modeling of betavoltaic microbattery performance10.1016/j.sna.2016.01.028 ↗
12. Design principles of narrow and wide bandgap-based betavoltaic batteries10.1109/ted.2018.2874652 ↗
13. Design and optimization of radioisotope sources for betavoltaic batteries10.1002/er.4053 ↗
14. 2013
15. 2006
16. Solar cell fill factors: General graph and empirical expressions10.1016/0038-1101(81)90062-9 ↗
17. Signal processing for semiconductor detectors10.1109/tns.1982.4336332 ↗
18. Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach10.1063/1.4776703 ↗
19. 2014
20. Review of betavoltaic energy conversion
21. Present status of microstructured semiconductor neutron detectors10.1016/j.jcrysgro.2012.10.061 ↗
22. Scalable large-area solid-state neutron detector with continuous p-n junction and extremely low leakage current10.1016/j.nima.2014.06.047 ↗
23. Damage correlations in semiconductors exposed to gamma, electron and proton radiations10.1109/23.273529 ↗
24. Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si10.1080/10408430490442458 ↗
25. Radiation damage in silicon detectors10.1016/s0168-9002(03)01874-6 ↗
26. 2014
27. Oxide film assisted dopant diffusion in silicon carbide10.1016/j.tsf.2010.03.107 ↗
28. Deep levels created by low energy electron irradiation in 4H-SiC10.1063/1.1778819 ↗
29. Accelerated aging in 4H-SiC as a betavoltaic semiconductors using an electron beam system
30. Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN10.1063/1.5006814 ↗
31. Ultradeep electron cyclotron resonance plasma etching of GaN10.1116/1.4994829 ↗
32. High-performance GaN vertical fin power transistors on bulk GaN substrates10.1109/led.2017.2670925 ↗
33. Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma10.7567/jjap.57.06jd01 ↗
34. High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy10.1021/acs.cgd.5b01598 ↗
35. Self-induced growth of vertical GaN nanowires on silica10.1088/0957-4484/27/13/135602 ↗
36. Ionizing radiation damage effects on GaN devices10.1149/2.0251602jss ↗
37. Radiation hardness of gallium nitride10.1109/tns.2002.805363 ↗
38. Design optimization of GaAs betavoltaic batteries10.1088/0022-3727/44/21/215303 ↗
39. InGaP alpha voltaic batteries: Synthesis, modeling, and radiation tolerance10.1063/1.2390623 ↗
40. Electrophoretic deposition of 10B nano/micro particles in deep silicon trenches for the fabrication of solid state thermal neutron detectors10.1142/s0129156418400025 ↗
41. High detection efficiency micro-structured solid-state neutron detector with extremely low leakage current fabricated with continuous p-n junction10.1063/1.4802204 ↗
42. 2016 · 185
43. 6:1 aspect ratio silicon pillar based thermal neutron detector filled with 10B10.1063/1.2985817 ↗
44. High aspect ratio composite structures with 48.5% thermal neutron detection efficiency10.1063/1.4792703 ↗
45. Nine element Si-based pillar structured thermal neutron detector10.1117/12.862391 ↗
46. 2016 · 1
47. Fabrication and doping methods for silicon nano-and micropillar arrays for solar-cell applications: A review10.1002/adma.201502632 ↗
48. 2013
49. 2016
50. Polymorphic modifications of Pm2O310.1111/j.1151-2916.1972.tb11329.x ↗
51. 1994
52. Betavoltaic power sources10.1063/pt.3.1820 ↗
53. 1978
54. Electroless plating of nickel on silicon for fabrication of high-aspect-ratio microstructures10.1016/s0924-4247(96)01318-0 ↗
55. 2010
56. Theoretical maximum efficiencies of optimized slab and spherical betavoltaic systems utilizing Sulfur-35, Strontium-90, and Yttrium-9010.13182/nt12-a14095 ↗
57. Advances in betavoltaic power sources
58. Liquid-semiconductor-based micro power source using radioisotope energy conversion
59. Factors affecting copper filling process within high aspect ratio deep vias for 3D chip stacking
60. Characterization of microstructured semiconductor neutron detectors