Unipolar resistive switching in planar Pt/BiFeO3/Pt structure
Source abstract
Abstract
We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of ∼104 and good data retention (verified for up to 3,000 s). We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of ∼100 mW/cm2. Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical) model.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Puerto Rico 1 Institute of Functional Nanomaterials, , San Juan, PR 00931, USA
University of Puerto Rico 2 Department of Physics, , San Juan, Puerto Rico, PR 00936, USA
University of Puerto Rico 3 Department of Chemistry, , San Juan, PR 00936, USA
University of Cambridge 4 Cavendish Laboratory, Department of Physics, , CB0 3HE, United Kingdom
Funding
National Science Foundation · National Aeronautics and Space Administration · University Grants Commission
References (28)
Show source-provided references
1. 2010
2. Appl. Phys. Lett. · 2006 · 89 · 10350910.1063/1.2339032 ↗
3. Nat. Mater · 2010 · 9 · 30910.1038/nmat2703 ↗
4. Rep. Prog. Phys. · 2012 · 75 · 07650210.1088/0034-4885/75/7/076502 ↗
5. Appl. Phys. Express. · 2014 · 7 · 09580110.7567/APEX.7.095801 ↗
6. Appl, Phys. Lett. · 2005 · 87 · 26290710.1063/1.2147719 ↗
7. Mater. Res. Soc. Symp. Proc. · 2013 · 157710.1557/opl.2013.702 ↗
8. Appl. Phys. Lett. · 2014 · 104 · 07350110.1063/1.4865802 ↗
9. Nat. Comm. · 2013 · 4 · 283510.1038/ncomms3835 ↗
10. Int. J. Appl. Ceram. Technol. · 2011 · 8 · 124610.1111/j.1744-7402.2010.02577.x ↗
11. Appl. Phys.Lett. · 2009 · 94 · 23290210.1063/1.3152784 ↗
12. Appl. Phys. Lett. · 2010 · 97 · 04210110.1063/1.3467838 ↗
13. Appl. Phys. Lett. · 2011 · 98 · 19290110.1063/1.3589814 ↗
14. Appl. Phys. Lett. · 2011 · 98 · 17350710.1063/1.3584031 ↗
15. J. Phys. D, Appl. Phys. · 2014 · 47 · 42530310.1088/0022-3727/47/42/425303 ↗
16. Nanotechnology · 2010 · 5 · 143
17. Appl. Phys. Lett. · 2014 · 105 · 14290210.1063/1.4897627 ↗
18. J. Phys. D: Appl. Phys. · 2014 · 47 · 07550210.1088/0022-3727/47/7/075502 ↗
19. J. Appl. Phys. · 2009 · 106 · 01410310.1063/1.3158556 ↗
20. Phys. Rev. B. · 2011 · 84 · 12530510.1103/PhysRevB.84.125305 ↗
21. Jpn. J. Appl. Phys. · 2008 · 47 · 626610.1143/JJAP.47.6266 ↗
22. Jpn. J. Appl. Phys. · 2008 · 47 · 626610.1143/JJAP.47.6266 ↗
23. J. Appl. Phys. · 2015
24. Appl. Phys. Lett. · 2004 · 84 · 173110.1063/1.1667612 ↗
25. J. Appl. Phys. · 2014 · 116 · 08450510.1063/1.4893661 ↗
26. J. Appl. Phys. · 2011 · 110 · 11411710.1063/1.3665871 ↗
27. Appl. Phys. Lett. · 2013 · 102 · 10290110.1063/1.4795145 ↗
28. ACS Appl. Mater. Interfaces · 2014 · 6 · 634610.1021/am501630k ↗