UV degradation analysis of TOPCon cells
Source abstract
Abstract
In the field of photovoltaics (PVs), tunnel oxide passivating contacts (TOPCon) cells have emerged as one of the mainstream cell structures adopted by PV module manufacturers, primarily due to their high photovoltaic conversion efficiency and excellent low-light performance. Ensuring the long-term reliability of TOPCon cells and modules is crucial, and the ultraviolet-light (UV) test serves as an essential method for assessing this reliability. By comparing the electrical performance parameters of TOPCon cells produced by a first-tier solar cell manufacturer before and after the UV test, it was observed that the electrical performance of both the front and rear sides degraded post-test. Notably, the rear side of the cell exhibited greater sensitivity to UV irradiation, with more pronounced degradation. When similar tests were conducted on cells with different passivation processes, UV degradation was still evident but varied in severity. This suggests that mass-produced TOPCon cells currently face issues with UV degradation, which can be mitigated by optimizing the thickness or refractive index distribution of the passivation layer. The UV resistance of the front side can be enhanced by adjusting the number of atomic layer deposition aluminum oxide cycles to modify the layer thickness and the structural composition of silicon nitride (SiNx). Similarly, the UV resistance of the rear side can be improved by optimizing the number, thickness, and refractive index of SiNx layers. These adjustments are essential for maintaining high double-sided power output in TOPCon cells.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Photovoltaic System Optimization Techniques · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Advanced Engineering, University of Science and Technology Beijing 1 , Beijing 100083,
THALES Energy (SuZhou) Co., Ltd. 2 , Suzhou 215332,
Chuzhou Jietai New Energy Technology Co., Ltd. 3 , Chuzhou 239236,
References (31)
Show source-provided references
1. Tunnel oxide passivated contacts as an alternative to partial rear contacts10.1016/j.solmat.2014.06.015 ↗
2. UV-induced degradation in multicrystalline PERC cell and module10.1016/j.solener.2018.06.044 ↗
3. Improved functionality of lithium-ion batteries enabled by atomic layer deposition on the porous microstructure of polymer separators and coating electrodes10.1002/aenm.201100750 ↗
4. Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24%10.1002/pip.3607 ↗
5. Atomic layer deposition of Al2O3 thin films using dimethyl aluminum sec-butoxide and H2O molecules10.3740/mrsk.2016.26.8.430 ↗
6. Enlarged firing window and efficiency boosting of PERC solar cells by ‘laser enhanced contact optimization · 2022 · 2487 · 110001
7. Laser-enhanced contact optimization on iTOPCon solar cells10.1002/pip.3598 ↗
8. The theory of p-n junctions in semiconductors and p-n junction transistors10.1002/j.1538-7305.1949.tb03645.x ↗
9. Improving solar cell efficiencies by down-conversion of high-energy photons10.1063/1.1492021 ↗
10. The band–band Auger effect in semiconductors10.1016/0038-1101(87)90074-8 ↗
11. Models for numerical device simulations of crystalline silicon solar cells—A review10.1007/s10825-011-0367-6 ↗
12. Absorption coefficient of silicon for solar cell calculations10.1016/0038-1101(79)90128-x ↗
13. 1991
14. Optimizing strategy of bifacial TOPCon solar cells with front-side local passivation contact realized by numerical simulation10.1016/j.solmat.2024.113189 ↗
15. UV light-induced degradation of industrial silicon HJT solar cells: Degradation mechanism and recovery strategies10.31875/2410-2199.2023.10.04 ↗
16. Optimization of efficiency enhancement of TOPCon cells with boron selective emitter10.1016/j.solmat.2023.112585 ↗
17. Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers10.1016/j.solmat.2015.06.048 ↗
18. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics10.1016/j.solmat.2013.09.017 ↗
19. Excellent surface passivation quality on crystalline silicon using industrial-scale direct-plasma TOPCon deposition technology10.1002/solr.201800068 ↗
20. Laser doping selective emitter with thin borosilicate glass layer for n-type TOPCon solar cells10.2139/ssrn.4293028 ↗
21. High-resolution structural investigation of passivated interfaces of silicon solar cells10.1016/j.solmat.2015.06.051 ↗
22. Impact of non-uniform carrier density on the determination of metal induced recombination losses · 2019 · 2147 · 020005
23. High-efficiency c-Si solar cells passivated with ALD and PECVD aluminum oxide10.1109/led.2010.2049190 ↗
24. Stability of SiNx/SiNx double stack antireflection coating for single crystalline silicon solar cells10.1186/1556-276x-7-50 ↗
25. Improving solar cell efficiency through hydrogen bonding: A method for tuning active layer morphology10.1021/cm503915t ↗
26. Rear side gratings for silicon solar cells: Efficiency enhancement finally demonstrated10.1117/12.2228713 ↗
27. Jinko solar n-type TOPCon technology and product advantages
28. Ultra-thin silicon oxide tunnel layer passivated contacts for screen-printed n-type industry solar cells10.1016/j.solmat.2023.112657 ↗
29. Optical and electrical characterization of poly-Si/SiOx contacts and their implications on solar cell design10.1016/j.egypro.2017.09.336 ↗
30. High-temperature stability of c-Si surface passivation by thick PECVD Al2O3 with and without hydrogenated capping layers10.1016/j.apsusc.2012.03.171 ↗
31. On the blistering of atomic layer deposited Al2O3 as Si surface passivation10.1109/PVSC.2011.6185916 ↗