Magnetoexciton–photon coupling in a semiconductor quantum microcavity subjected to a parallel electric field

The strong coupling of light with magnetoexcitons in a quantum well within a semiconductor microcavity under the action of an electric field parallel to the quantum well plane, is theoretically studied. Such a phenomenon is described within the Stahl–Balslev real-space density-matrix approach using a system of coupled equations for the coherent-wave amplitude and the electromagnetic fields. In the study, both s- and p-polarization geometries as well as the Coulomb interaction potential between electrons and holes are considered. It is shown that the optical reflectivity spectra for a heterostructure, having an InGaAs/GaAs quantum well inside the semiconductor microcavity with Bragg mirrors of alternating GaAs and InGaAs layers, exhibit well-discernible resonant dips. The strong magnetoexciton–photon coupling occurs when the magnetoexciton resonance frequency and that of the confined photon are close to each other. The application of a static electric field, parallel to the interfaces of the layers, allows for the optical excitation of magnetoexcitons, having nonzero angular momentum projection, and noticeably alters the resonance structure of both s- and p-polarization optical spectra. The strong magnetoexciton–photon coupling is observed until sufficiently large magnitudes of the applied parallel electric field are reached.