Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric
Source abstract
Abstract
The low-frequency noise of planar transistors with ferroelectric Si-doped HfO2 as a gate dielectric is investigated and compared with that of undoped HfO2 reference devices. Predominantly 1/f-like spectra have been observed, which are governed by carrier number fluctuations or trapping in the gate stack. The corresponding noise power spectral density is about a factor of three higher for the reference devices, indicating that Si-doping reduces in a way similar to the trap density in the HfO2 layer.
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Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
IMEC 1 , Kapeldreef 75, B-3001 Leuven, Belgium
STS, IMEC 2 , Kapeldreef 75, B-3001 Leuven, Belgium, and , Kasteelpark Arenberg 10, 3001 Leuven, Belgium
TELEMIC, KU Leuven 2 , Kapeldreef 75, B-3001 Leuven, Belgium, and , Kasteelpark Arenberg 10, 3001 Leuven, Belgium
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