Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

David Kohen; Xuan Sang Nguyen; Sachin Yadav; Annie Kumar; Riko I Made; Christopher Heidelberger; Xiao Gong; Kwang Hong Lee; Kenneth Eng Kian Lee; Yee Chia Yeo; Soon Fatt Yoon; Eugene A. Fitzgerald

doi:10.1063/1.4961025

journal article·2016-08-01Open access

Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

David Kohen, Xuan Sang Nguyen, Sachin Yadav, Annie Kumar, Riko I Made, Christopher Heidelberger, Xiao Gong, Kwang Hong Lee, Kenneth Eng Kian Lee, Yee Chia Yeo, Soon Fatt Yoon, Eugene A. Fitzgerald

AIP Advances· Volume 6· Issue 8

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Abstract

We report on the growth of an In0.30Ga0.70As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 107 cm−2 with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with IDS of 70 μA/μm and gm of above 60 μS/μm, demonstrating the high quality of the grown materials.

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Research context

Electronic materials

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Singapore-MIT Alliance for Research and Technology 1 Low Energy Electronic Systems IRG (LEES), , 1 CREATE Way, Singapore 138602

National University of Singapore 2 , 21 Lower Kent Ridge Rd, Singapore 119077

Massachusetts Institute of Technology 3 Department of Materials Science and Engineering, , 77 Massachusetts Avenue, Cambridge, MA 02139, USA

Nanyang Technological University 4 School of Electrical and Electronic Engineering, , 50 Nanyang Avenue, Singapore 639798, Singapore

Funding

Singapore-MIT Alliance for Research and Technology Centre · National Research Foundation Singapore

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