Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects
Source abstract
Abstract
The present paper deals with the modeling of the simultaneous impact of temperature and applied hydrostatic pressure on the electronic characteristics and electrical parameters in In0.2Ga0.8N/GaN p-i-n solar cells. The energy conduction band is calculated with a self-consistent model coupled with the photovoltaic parameters taking into consideration the spontaneous and piezoelectric polarizations. A new efficient numerical model based on the difference finite method is well suited to theoretical and experimental data. The results reveal that the hydrostatic pressure has a beneficial effect on the behavior of cells on the N-face configuration, whereas the elevated temperature has a destructive impact on these devices.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Quantum and Statistical Physics Laboratory, Faculty of Sciences of Monastir, University of Monastir 1 , Monastir 5019, Tunisia
Department of Computer Science and Information, College of Science, Majmaah University 2 , Zulfi 11932, Saudi Arabia
Electronics and Microelectronics Laboratory, Faculty of Science of Monastir, University of Monastir 3 , Monastir 5019, Tunisia
Department of Physics, College of Science, Majmaah University 4 , Al Zulfi 11932, Saudi Arabia
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