Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering
Source abstract
Abstract
Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2). The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF)-sputtering system on the growth of intrinsic SnO2 (i-SnO2) layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.
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Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Energy and Water Research Center (NEWRC) 2 , P.O. Box 54111, Abu Dhabi, United Arab Emirates
Department of Mechanical and Materials Engineering, Masdar Institute of Science and Technology as a Part of Khalifa University of Science and Technology 1 , P.O. Box 127788, Abu Dhabi, United Arab Emirates
Funding
Abu Dhabi Water and Electricity Authority · Masdar Institute of Science and Technology
References (23)
Show source-provided references
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