Auger recombination rates in dilute-As GaNAs semiconductor
Source abstract
Abstract
The evaluation of Auger recombination process for dilute-As GaNAs alloy is presented. Our analysis indicates the suppression of interband Auger recombination mechanism in dilute-As GaNAs alloy in the green spectral regime. The interband Auger coefficient in dilute-As GaNAs alloy is shown as two orders of magnitude lower than that of its corresponding intraband Auger rate. Our results confirm that the second conduction band has a negligible effect on the interband Auger process in dilute-As GaNAs alloy due to the non-resonant condition of the process. Our findings show the importance of dilute-As GaNAs as an alternative visible material with low Auger recombination rates.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Lehigh University Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, , Bethlehem, PA 18015, USA
Funding
National Science Foundation
References (38)
Show source-provided references
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