Novel type-II material system for laser applications in the near-infrared regime
Source abstract
Abstract
The design and experimental realization of a type-II “W”-multiple quantum well heterostructure for emission in the λ > 1.2 μm range is presented. The experimental photoluminescence spectra for different excitation intensities are analyzed using microscopic quantum theory. On the basis of the good theory–experiment agreement, the gain properties of the system are computed using the semiconductor Bloch equations. Gain values comparable to those of type-I systems are obtained.
Source: crossref · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Lasers and Optical Devices · Photonic and Optical Devices · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Philipps-Universität Marburg 1 Department of Physics and Material Sciences Center, , Renthof 5, 35032 Marburg, Germany
NAsPIII/V GmbH 2 , Am Knechtacker 19, 35041 Marburg, Germany
Nonlinear Control Strategies Inc 3 , 3542 N. Geronimo Ave., Tucson, AZ 85705, USA
Funding
Deutsche Forschungsgemeinschaft · Small Business Innovative Research and Small Business Technology Transfer
References (23)
Show source-provided references
1. The semiconductor laser: Enabling optical communication10.1038/nphoton.2010.107 ↗
2. 2010
3. High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams10.1109/68.605500 ↗
4. Vertical-external-cavity semiconductor lasers10.1088/0022-3727/37/9/R01 ↗
5. Passively modelocked surface-emitting semiconductor lasers10.1016/j.physrep.2006.03.004 ↗
6. Semiconductor optoelectronic devices
7. Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure10.1063/1.1664033 ↗
8. Realization and modeling of a pseudomorphic (GaAs1-xSbx–InyGa1-yAs)/GaAs bilayer-quantum well10.1063/1.114321 ↗
9. Mechanism of suppression of Auger recombination processes in type-II heterostructures10.1063/1.114291 ↗
10. Type-II quantum-well lasers for the mid-wavelength infrared10.1063/1.115216 ↗
11. Low-lattice-strain long-wavelength GaAsSb/GaInAs type-II quantum wells grown on GaAs substrates10.1143/JJAP.41.L1040 ↗
12. Antimonide type-II “W” lasers
13. Many-body correlations and excitonic effects in semiconductor spectroscopy10.1016/j.pquantelec.2006.12.002 ↗
14. 2012
15. 2009
16. Determination of the lattice strain and chemical composition of semiconductor heterostructures by high-resolution x-ray diffraction10.1063/1.361773 ↗
17. k⋅p theory of the Franz-Keldysh effect10.1103/PhysRevB.55.6960 ↗
18. 1999
19. Efficient band-structure calculations of strained quantum wells10.1103/PhysRevB.43.9649 ↗
20. Microscopic theory of gain and spontaneous emission in GaInNAs laser material10.1016/S0038-1101(02)00405-7 ↗
21. Model of the field-effect quantum-well laser with free-carrier screening and valence band mixing10.1063/1.342118 ↗
22. Microscopic modeling of gain and luminescence in semiconductors10.1109/JSTQE.2003.818342 ↗
23. Quantum design of semiconductor active materials: laser and amplifier applications10.1002/lpor.200610003 ↗