journal article·2018-03-01Open access

Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

Ali Hassan, Yuhua Jin, Muhammad Irfan, Yijian Jiang

AIP Advances· Volume 8· Issue 3

Abstract

Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM) analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (∼ 6 nm to 10 nm) and surface roughness rms value 3 nm for thickness ∼315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV) region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.
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Research context

OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Laser Engineering, Beijing University of Technology 1 , Beijing 100124, PR China

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences 2 , Beijing 100190, PR China

Funding

National Natural Science Foundation of China · China Scholarship Council

References (62)

Show source-provided references
1. Piezoelectricity in ZnO nanowires: A first-principles study10.1063/1.2397013 ↗
2. Optoelectronic properties of three-dimensional ZnO hybrid structure10.1063/1.1872209 ↗
3. Effects of nitrogen and oxygen partial pressure on the structural and optical properties of ZnO: N thin films prepared by magnetron sputtering10.1016/j.matlet.2015.11.105 ↗
4. Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films10.1016/j.matlet.2015.08.143 ↗
5. Origin of p-type conductivity for N-doped ZnO nanostructure synthesized by MOCVD method10.1016/j.matlet.2015.09.075 ↗
6. Experimental investigation on nitrogen related complex acceptors in nitrogen-doped ZnO films10.1016/j.jallcom.2016.11.262 ↗
7. Valence-band-edge shift due to doping in p+ GaAs10.1063/1.104981 ↗
8. Band gap tuning of lead-substituted BaSnO3 for visible light photocatalysis10.1063/1.2430932 ↗
9. Origins of band-gap renormalization in degenerately doped semiconductors10.1103/physrevb.78.075211 ↗
10. On the modification of the Fermi–Dirac distribution function in degenerate semiconductors10.1016/j.physb.2004.06.062 ↗
11. Optical band gap and the Burstein–Moss effect in iodine doped PbTe using diffuse reflectance infrared Fourier transform spectroscopy10.1088/1367-2630/15/7/075020 ↗
12. The Burstein-Moss effect in Cu2GeSe3:Co2+ single crystals10.1063/1.371141 ↗
13. Electron concentration dependence of optical band gap shift in Ga-doped ZnO thin films by magnetron sputtering10.1016/j.tsf.2014.06.046 ↗
14. Gap narrowing in charged and doped silicon nanoclusters10.1103/physrevb.82.235419 ↗
15. Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy10.1016/j.jcrysgro.2015.02.034 ↗
16. Electron beam deposition of ZrO2·ZnO films10.1016/s0040-6090(96)09195-x ↗
17. Structural and optical properties of Cr doped ZnO crystalline thin films deposited by reactive electron beam evaporation technique10.1016/j.pnsc.2013.01.010 ↗
18. Effect of substrate temperature on transparent conducting Al and F co-doped ZnO thin films prepared by rf magnetron sputtering10.1016/j.apsusc.2016.02.161 ↗
19. Optical tailoring of RF magnetron sputtered ZnO thin films10.1088/1742-6596/864/1/012014 ↗
20. ZnO thin films on single carbon fibres fabricated by pulsed laser deposition (PLD)10.1016/j.apsusc.2016.12.046 ↗
21. Quantum confinement effect and size-dependent photoluminescence in laser ablated ultra-thin GZO films
22. Polymer-templated hydrothermal growth of vertically aligned single-crystal ZnO nanorods and morphological transformations using structural polarity10.1002/adfm.201000613 ↗
23. Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders10.1021/nl060204z ↗
24. Magnetic properties of ZnO nanoparticles10.1021/nl070198m ↗
25. Structural and photoluminescence properties of ZnO thin films prepared by sol-gel process10.1063/1.3021358 ↗
26. Structural and optical properties of ZnO nanotower bundles10.1063/1.2188386 ↗
27. Defect induced ferromagnetism in carbon-doped ZnO thin films10.1016/j.ssc.2010.10.035 ↗
28. Enhanced room temperature ferromagnetism and photoluminescence behavior of Cu-doped ZnO co-doped with Mn10.1016/j.physe.2015.02.010 ↗
29. Effects of nitrogen pressure during pulsed laser deposition on morphology and optical properties of N-doped ZnO nanostructures10.1016/j.susc.2012.11.002 ↗
30. Effect of nitrogen doping on structural, morphological, optical and electrical properties of radio frequency magnetron sputtered zinc oxide thin films10.1016/j.physb.2016.03.009 ↗
31. XPS study of nitrogen-implanted ZnO thin films obtained by DC-magnetron reactive plasma10.1016/j.elspec.2007.11.003 ↗
32. N-doped ZnO nano-arrays: A facile synthesis route, characterization and photoluminescence10.1016/j.matlet.2007.03.020 ↗
33. Nitrogen-doped ZnO nanowire arrays for photoelectrochemical water splitting10.1021/nl900772q ↗
34. A comparison of plasma-activated N2/O2 and N2O/O2 mixtures for use in ZnO: N synthesis by chemical vapor deposition10.1063/1.1804614 ↗
35. Electrical and structural properties of p-type ZnO: N thin films prepared by plasma enhanced chemical vapour deposition10.1088/0268-1242/20/8/027 ↗
36. Structural and optical properties of N-doped ZnO nanorod arrays10.1088/0022-3727/42/19/195402 ↗
37. Method of control of nitrogen content in ZnO films: Structural and photoluminescence properties10.1116/1.1641057 ↗
38. Optimization of N2/Ar gas flow ratio for the realization of nitrogen-doped p-type ZnCdO thin films synthesized by RF magnetron sputtering10.1016/j.mssp.2017.01.002 ↗
39. Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition10.1016/j.materresbull.2014.05.020 ↗
40. XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films10.1016/0040-6090(95)08239-5 ↗
41. Near-infrared optical constants and optical polarization properties of ZnO thin films10.1016/j.tsf.2015.02.036 ↗
42. Moss–Burstein and plasma reflection characteristics of heavily doped n-type InxGa1−xAs and InPyAs1−y10.1063/1.370751 ↗
43. Effects of impurity compensation on electrical properties of p-type germanium under hydrostatic pressure10.1063/1.1661145 ↗
44. Nitrogen is a deep acceptor in ZnO10.1063/1.3582819 ↗
45. Acceptors in ZnO10.1063/1.4913827 ↗
46. Production of nitrogen acceptors in ZnO by thermal annealing10.1063/1.1450041 ↗
47. Charge-carrier equilibrium in semiconductors according to the mass-action law10.1119/1.1986444 ↗
48. A high sensitivity test of the Pauli exclusion principle for electrons10.1063/1.3567469 ↗
49. Band gap widening and narrowing in Cu-doped ZnO thin films10.1016/j.jallcom.2016.04.093 ↗
50. Enhanced surface area, high Zn interstitial defects and band gap reduction in N-doped ZnO nanosheets coupled with BiVO4 leads to improved photocatalytic performance10.1016/j.apsusc.2017.03.189 ↗
51. Band filling with free charge carriers in organometal halide perovskites10.1038/nphoton.2014.171 ↗
52. Carrier concentration dependence of band gap shift in n-type ZnO: Al films10.1063/1.2721374 ↗
53. Structural and electrical properties of nitrogen-doped ZnO thin films10.1016/j.apsusc.2014.02.118 ↗
54. Optical signatures of nitrogen acceptors in ZnO10.1103/physrevb.85.235204 ↗
55. Efficient nitrogen incorporation in ZnO nanowires
56. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO10.1038/nmat1284 ↗
57. ZnO based transparent conductive oxide films with controlled type of conduction10.1016/j.tsf.2014.02.090 ↗
58. Structural, optical and AC conductivity studies on alloy ZnO–Zn2SnO4 (ZnO–ZTO) thin films10.1016/j.jallcom.2015.02.009 ↗
59. Optical conductivity tuning and electrical properties of a-BexZnyO thin films10.1016/j.jnoncrysol.2016.03.005 ↗
60. Piezo-phototronic effect enhanced photo-detector based on ZnO nano-arrays/NiO structure10.1016/j.apsusc.2017.09.023 ↗
61. High-sensitivity UV photodetector based on oblique and vertical Co-doped ZnO nanorods10.1016/j.matlet.2017.12.019 ↗
62. High performance ultraviolet photodetectors based on ZnO nanoflakes/PVK heterojunction10.1063/1.4961114 ↗