Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors

H. Y. Jia; X. F. Dai; L. Y. Wang; R. Liu; X. T. Wang; P. P. Li; Y. T. Cui; G. D. Liu

doi:10.1063/1.4871403

journal article·2014-04-01Open access

Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors

H. Y. Jia, X. F. Dai, L. Y. Wang, R. Liu, X. T. Wang, P. P. Li, Y. T. Cui, G. D. Liu

AIP Advances· Volume 4· Issue 4

Publisher page Open full text

Source abstract

Abstract

Ti2MnZ (Z=Al, Ga, In) compounds with CuHg2Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be adjusted by changing the lattice parameter or doping congeners. These compounds are completely-compensated ferrimagnets with a zero magnetic moment.

Source: crossref · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Heusler alloys: electronic and magnetic properties · MXene and MAX Phase Materials · Inorganic Chemistry and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Hebei University of Technology 1 School of Material Sciences and Engineering, , Tianjin 300130, P. R. China

Chongqing Normal University 2 College of Physics and Information Technology, , 401331, Chongqing, People's Republic of China

Funding

NNSFC

References (20)

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