Dynamically controlled charge sensing of a few-electron silicon quantum dot
Source abstract
Abstract
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitally-controlled feedback, the sensor exhibits sensitive and robust detection of the charge state of the quantum dot, even in the presence of charge drifts and random charge upset events. The sensor enables the occupancy of the quantum dot to be probed down to the single electron level.
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Research context
OpenAlex topics: Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices
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Affiliations
The University of New South Wales Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering & Telecommunications, , Sydney 2052, Australia
Funding
Army Research Office
References (21)
Show source-provided references
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