Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on
Source abstract
Abstract
Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼−1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (−0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Electro-Optical Science and Technology 1 , National Taiwan Normal University, Taipei, Taiwan
Institute of Microelectronics, National 2 Cheng Kung University, Tainan, Taiwan
Department of Electrical Engineering and Graduate Institute of Electronics Engineering 3 , National Taiwan University, Taipei, Taiwan
Device Design Division 4 , PTEK Technology Co., Ltd, Hsinchu, Taiwan
Funding
National Science Council Taiwan · Ministry of Science and Technology, Taiwan
References (17)
Show source-provided references
1. 2008 · 947
2. Japn. J. of Appl. Phys. · 2004 · 43 · 407310.1143/JJAP.43.4073 ↗
3. IEEE Electron Device Letter · 2008 · 29 · 46810.1109/LED.2008.920280 ↗
4. IEEE Electron Device Letter · 2011 · 32 · 135510.1109/LED.2011.2163379 ↗
5. 2010 · 121
6. 2008 · 14
7. IEEE Trans. on Electron Device · 2013 · 60 · 242310.1109/TED.2013.2264101 ↗
8. 2012 · 49
9. Appl. Phys. Lett. · 2007 · 90 · 01211410.1063/1.2400394 ↗
10. Semicond. Sci. Technol. · 2007 · 22 · 34210.1088/0268-1242/22/4/008 ↗
11. IEEE Electron Device Lett. · 2010 · 31 · 14110.1109/LED.2009.2036138 ↗
12. 2008 · 167
13. 2010 · 395
14. 2008 · 693
15. 2011 · 255
16. 2013 · 104
17. J. of Applied Phys. · 2004 · 96 · 218610.1063/1.1767968 ↗