Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
Abstract
Research context
OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · Electronic and Structural Properties of Oxides
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Affiliations
University of Arkansas 1 Arkansas Institute for Nanoscale Material Sciences and Engineering, , Fayetteville, AR 72701, USA
University of Arkansas 2 Department of Electrical Engineering, , Fayetteville, AR 72701, USA
Peking University 3 International Center for Quantum Materials, School of Physics, , Beijing, 100871, China
The Pennsylvania State University 4 The Center for Nanoscale Science and Department of Physics, , University Park, PA 16802, USA
University of Electronic Science and Technology of China 5 State Key Laboratory of Electronic Thin Films and Integrated Devices, , Chengdu 610054, China
Chinese Academy of Science 6 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, , Beijing 100083, China