Synthesis of large-scale few-layer PtS2 films by chemical vapor deposition

PtS2, a group-10 transition metal dichalcogenide, has prominent layer-depended band structure, and can enable extremely high phonon-limited mobility at room temperature. Here, we demonstrate the theoretical study on the electronic band structures of PtS2 with different thickness by using density functional theory (DFT), as well as experimental realization of large-area synthesis of few-layer PtS2 film by direct sulfurization of pre-deposited Pt. The synthetic process suggested that the reaction pressure is a key factor in the formation of high-quality PtS2 semiconducting films. Characterizations with atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) have indicated that good film stoichiometry and uniformity have been achieved. Furthermore, field-effect transistor (FET) arrays were fabricated based on the large-scale PtS2 film, exhibiting well-uniform electrical performance with p-type transport behavior. These results can open up an attractive approach to promote the large-scale applications of PtS2 in advanced nanoelectronics and optoelectronics devices and systems.