Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS ₂ Memory Transistor

ABSTRACT The rise of data‐driven technologies has exposed the limitations of von Neumann architectures in meeting the growing demands for efficient data storage and processing. These challenges motivate the development of ferroelectric materials that combine strong polarization, reliable switching, and multifunctionality. Here, we report a hybrid ferroelectric platform that integrates two‐dimensional (2D) CuInP ₂ S ₆ (CIPS) nanosheets into a poly(vinylidene fluoride–trifluoroethylene) (P(VDF‐TrFE)) matrix, enabling cooperative ferroelectric–ferroelectric coupling. A solvent‐balanced isopropanol–methyl ethyl ketone process ensures uniform CIPS dispersion and promotes ferroelectric β‐phase crystallization of P(VDF‐TrFE), resulting in synergistic dipole reinforcement. Consequently, the hybrid film exhibits a nearly 75% increase in remnant polarization and a 15% reduction in coercive field. Leveraging this enhanced ferroelectricity, MoS ₂ ‐based ferroelectric transistors demonstrate stable nonvolatile memory characteristics, exhibiting reliable retention beyond 10,000 s and endurance over 300 switching cycles. Intriguingly, the hybrid dielectric further enables high‐performance unipolar p‐type operation under extended negative gating. Moreover, optoelectronic multilevel memory behavior emerges from the cooperative interplay between the dipole orientations in P(VDF‐TrFE) and photon‐induced partial depolarization of CIPS. This work represents the first demonstration of polarization‐cooperative enhancement in polymer ferroelectrics using 2D ferroelectric fillers and establishes P(VDF‐TrFE)/CIPS hybrids as a versatile platform for flexible, low‐power, and multifunctional ferroelectric electronics.