Dirac Surface‐State Driven Broad Spectral Band Low Quantum Energy Photoresponse in Quaternary Topological BiSbSe 2 Te
Source abstract
Abstract
ABSTRACT 2D topological materials are garnering significant interest for their potential in optoelectronic applications, particularly due to their unique quantum transport properties and exceptional optical characteristics. In this work, quaternary topological BiSbSe 2 Te with stoichiometry modulation from Bi 2 Se 3 are synthesized and demonstrates a broad spectral band photoresponse, ranging from infrared to terahertz and to millimeter waves, with a particular excellence on detection of low quantum energy photons. The observed photoresponse is attributed to the excitation of plasmonic nonequilibrium electrons originating from the topological Dirac surface states inherent in the BiSbSe 2 Te. The detector exhibits remarkable performance, achieving a responsivity of 8174 V/W and a noise equivalent power of 4.7 × 10 − 1 3 W/Hz 1/2 at 0.094 THz, with a wide low quantum energy terahertz and millimeter wave photoresponse spanning from 0.032 to 0.173 THz. The study underscores the potential of Dirac surface‐state driven photoresponse in BiSbSe 2 Te, paving the way for the development of sensitive, broad spectral band and room‐temperature low quantum energy photodetectors, which are highly pursued for a variety of applications.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Topological Materials and Phenomena · 2D Materials and Applications · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Optoelectronic Engineering Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou China
State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai China
University of Chinese Academy of Sciences Beijing China
Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception Institute of Optoelectronics Fudan University Shanghai China
School of Materials Science and Engineering Sun Yat‐sen University Guangzhou China
School of Electronic Information Central South University Changsha China
School of Physics University of Electronic Science and Technology of China Chengdu China
College of Materials Science and Engineering Hunan University Changsha China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Science Fund for Distinguished Young Scholars of Guangdong Province
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