Gate Enhancing Charge‐Spin Conversion in Organic Chiral Field Effect Transistors

ABSTRACT Organic ferroelectric field‐effect transistors (OFeFETs) are promising candidates for next‐generation wearable electronics and non‐volatile memory technologies owing to their bistable switching, low power consumption, and mechanical flexibility. Here, room‐temperature organic chiral multiferroic FETs are demonstrated, in which both gate field and chiral field dependence of charge‐spin conversion are studied. Remarkably, the chiral FET presents tens of micrometer chiral signal transport. This long‐range chiral transport provides an ideal platform for probing the interaction between charge and chirality‐induced polarized spin. The interfacial dipoles in the ferroelectric layer could impact the degree of charge carrier localization to further modulate spin polarization, presenting a charge‐spin conversion‐dependent magnetoelectric coupling. Conversely, polarized spin in the organic chiral layer could modify saturated ferroelectric polarization and ferroelectric hysteresis loop, apparently. In addition, when an external magnetic field is applied parallel (antiparallel) to the chiral axis, the OFET shows an enhanced (weakened) chiral magneto‐chiral current, which can also be modulated by remanent polarization.