journal article·2026-03Open access

Dissolution Study of Biodegradable Magnesium Silicide Thin Films for Transient Electronic Applications

Ji‐Woo Gu, Jun‐Seok Shim, Minjung Chae, Yoonseong Jung, Su‐Min Kim, Young‐In Ryu, Jae‐Hwan Lee, Sung‐Woo Kim, Kyung‐Sub Kim, Tae‐Woo Lee, Edyta Wyszkowska, Jungho Shin, Hyejin Jang, Ju‐Young Kim, Myoung‐Ryul Ok, Jong‐hyoung Kim, Jae‐Young Bae, Seung‐Kyun Kang

Advanced Science· Volume 13· Issue 15

Abstract

Abstract Transient electronic systems offer compelling solutions for sustainable technologies, enabling environmentally benign disposal in ecological settings and eliminating surgical retrieval in biomedical implants. At the core of such systems, biodegradable semiconductors serve as key materials not only for logic operations but also for realizing diverse sensing modalities. Here, a comprehensive study of magnesium silicide (Mg 2 Si) thin films as a narrow‐bandgap, biodegradable semiconductor platform for transient electronics is reported. Polycrystalline Mg 2 Si thin films are formed via RF magnetron sputtering and thermal annealing, followed by systematic investigation of their dissolution behavior under various pH and ionic conditions. Physiological relevance is confirmed by phosphate‐buffered saline testing, while environmental biodegradability is validated under composting conditions. In vitro cytotoxicity assays confirmed the biocompatibility of the material and its degradation byproducts. Mg 2 Si thin films exhibit an indirect bandgap of ≈0.84 eV, intrinsic carrier concentration (>10 18 cm −3 ), and thermal conductivity (<1.8 W m −1 K −1 ), along with broadband optical absorbance. Device‐level integration into thermoelectric harvesters yielded Seebeck coefficients of ≈130 µV K −1 and output power exceeding ≈0.338 µW cm −2 K −2 . Photosensors demonstrated photoresponse up to 1300 nm, confirming near‐infrared sensitivity. These results establish Mg 2 Si as a viable semiconductor for transient electronics, expanding the material spectrum beyond conventional wide‐bandgap semiconductors.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Magnesium Alloys: Properties and Applications · MXene and MAX Phase Materials · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea

Research Institute of Advanced Materials (RIAM) Seoul National University Seoul 08826 Republic of Korea

Biomaterials Research Center Biomedical Research Division Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

Nano Systems Institute SOFT Foundry Seoul National University Seoul 08826 Republic of Korea

National Centre for Nuclear Research NOMATEN CoE MAB+ ul. Andrzeja Sołtana 7 Otwock‐Swierk 05‐400 Poland

Department of Advanced Materials and Biochemical Engineering Gangneung‐Wonju National University Gangwon‐do 25457 Republic of Korea

Research Institute for Dental Engineering Gangneung‐Wonju National University Gangwon‐do 25457 Republic of Korea

Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

Division of Bio‐Medical Science and Technology KIST School Korea University of Science and Technology (KIST) Seoul 02792 Republic of Korea

Department of Materials Science and Engineering Pukyong National University Busan 48513 Republic of Korea

References (93)

Show source-provided references
1. 10.1126/science.122632510.1126/science.1226325 ↗
2. 10.1038/nature1649210.1038/nature16492 ↗
3. 10.1038/s41928-024-01216-x10.1038/s41928-024-01216-x ↗
4. 10.1021/acs.accounts.7b0054810.1021/acs.accounts.7b00548 ↗
5. 10.1557/mrs.2020.1910.1557/mrs.2020.19 ↗
6. Park Y.‐J. · Soft Sci. · 2024 · 4 · 16
7. 10.1016/j.mser.2021.10062410.1016/j.mser.2021.100624 ↗
8. 10.1038/s41928-022-00791-110.1038/s41928-022-00791-1 ↗
9. 10.1002/adma.20130605010.1002/adma.201306050 ↗
10. 10.1038/s41591-018-0196-210.1038/s41591-018-0196-2 ↗
11. 10.1038/s41587-021-00948-x10.1038/s41587-021-00948-x ↗
12. 10.1038/s41467-025-59835-710.1038/s41467-025-59835-7 ↗
13. 10.1002/adfm.20231061210.1002/adfm.202310612 ↗
14. 10.1126/sciadv.adh996210.1126/sciadv.adh9962 ↗
15. Kim Y.‐N. · Adv. Sci. · 2025 · 1210.1002/advs.202502056 ↗
16. 10.1038/s41586-025-08726-410.1038/s41586-025-08726-4 ↗
17. 10.1021/acsnano.7b0669710.1021/acsnano.7b06697 ↗
18. 10.1021/nn500847g10.1021/nn500847g ↗
19. 10.1021/nl503997m10.1021/nl503997m ↗
20. 10.1002/adma.20140457910.1002/adma.201404579 ↗
21. 10.1021/acsami.5b0252610.1021/acsami.5b02526 ↗
22. 10.1002/adfm.20130184710.1002/adfm.201301847 ↗
23. 10.1016/j.jma.2023.06.01610.1016/j.jma.2023.06.016 ↗
24. 10.1126/sciadv.abp916910.1126/sciadv.abp9169 ↗
25. 10.1002/adfm.20130429310.1002/adfm.201304293 ↗
26. 10.1016/j.mseb.2024.11777510.1016/j.mseb.2024.117775 ↗
27. 10.1109/TED.2022.316686810.1109/TED.2022.3166868 ↗
28. 10.1002/smll.20180094510.1002/smll.201800945 ↗
29. 10.1002/aelm.20220009810.1002/aelm.202200098 ↗
30. 10.1002/adfm.20130012710.1002/adfm.201300127 ↗
31. 10.1126/sciadv.aaw189910.1126/sciadv.aaw1899 ↗
32. 10.1038/s41467-024-45803-010.1038/s41467-024-45803-0 ↗
33. 10.1002/adma.20130482110.1002/adma.201304821 ↗
34. 10.1021/acsami.5b0008610.1021/acsami.5b00086 ↗
35. 10.1002/smll.20130014610.1002/smll.201300146 ↗
36. 10.1038/s41528-025-00385-910.1038/s41528-025-00385-9 ↗
37. 10.1038/s41467-018-03956-910.1038/s41467-018-03956-9 ↗
38. 10.1038/nnano.2016.28010.1038/nnano.2016.280 ↗
39. 10.1016/j.matpr.2020.03.72110.1016/j.matpr.2020.03.721 ↗
40. 10.1063/1.294672210.1063/1.2946722 ↗
41. 10.3390/en1513485910.3390/en15134859 ↗
42. 10.1039/C5TA03751D10.1039/C5TA03751D ↗
43. 10.1016/j.intermet.2012.08.02910.1016/j.intermet.2012.08.029 ↗
44. 10.1016/j.intermet.2018.01.00310.1016/j.intermet.2018.01.003 ↗
45. 10.1063/1.342902410.1063/1.3429024 ↗
46. 10.1063/1.364296510.1063/1.3642965 ↗
47. 10.1149/2.0621507jes10.1149/2.0621507jes ↗
48. 10.1016/j.corsci.2020.10872210.1016/j.corsci.2020.108722 ↗
49. 10.5006/0010-9312-68-4-210.5006/0010-9312-68-4-2 ↗
50. 10.1007/s11665-021-06355-210.1007/s11665-021-06355-2 ↗
51. 10.1038/s41598-020-79613-310.1038/s41598-020-79613-3 ↗
52. 10.1002/aenm.20180171810.1002/aenm.201801718 ↗
53. 10.1016/j.corsci.2016.08.02210.1016/j.corsci.2016.08.022 ↗
54. 10.1021/acs.langmuir.2c0154010.1021/acs.langmuir.2c01540 ↗
55. 10.1016/j.vacuum.2009.06.05510.1016/j.vacuum.2009.06.055 ↗
56. 10.1016/j.jallcom.2017.05.22410.1016/j.jallcom.2017.05.224 ↗
57. 10.1088/0953-8984/25/3/03540310.1088/0953-8984/25/3/035403 ↗
58. 10.1016/j.jallcom.2014.07.13710.1016/j.jallcom.2014.07.137 ↗
59. 10.1063/1.367527810.1063/1.3675278 ↗
60. 10.1063/1.37201710.1063/1.372017 ↗
61. 10.1016/0022-3697(61)90142-110.1016/0022-3697(61)90142-1 ↗
62. 10.1016/S0039-6028(98)80022-810.1016/S0039-6028(98)80022-8 ↗
63. 10.2497/jjspm.60.35410.2497/jjspm.60.354 ↗
64. 10.1063/1.473153310.1063/1.4731533 ↗
65. 10.1016/j.scriptamat.2016.06.00110.1016/j.scriptamat.2016.06.001 ↗
66. 10.1016/j.mssp.2023.10755210.1016/j.mssp.2023.107552 ↗
67. 10.1016/j.jallcom.2021.16196810.1016/j.jallcom.2021.161968 ↗
68. 10.1016/j.apsusc.2016.06.04110.1016/j.apsusc.2016.06.041 ↗
69. 10.1016/j.mseb.2021.11533810.1016/j.mseb.2021.115338 ↗
70. 10.1016/j.physb.2005.04.01710.1016/j.physb.2005.04.017 ↗
71. 10.1007/s11664-013-2482-610.1007/s11664-013-2482-6 ↗
72. 10.1149/1.208627710.1149/1.2086277 ↗
73. 10.1016/j.egyr.2019.12.01110.1016/j.egyr.2019.12.011 ↗
74. 10.1007/s00542-013-1993-710.1007/s00542-013-1993-7 ↗
75. 10.3390/mi1010066010.3390/mi10100660 ↗
76. 10.1002/pssa.221119012810.1002/pssa.2211190128 ↗
77. 10.1016/j.jallcom.2013.11.09210.1016/j.jallcom.2013.11.092 ↗
78. 10.1016/j.powtec.2012.05.03610.1016/j.powtec.2012.05.036 ↗
79. 10.1063/1.514383910.1063/1.5143839 ↗
80. 10.1016/j.mtphys.2024.10145210.1016/j.mtphys.2024.101452 ↗
81. 10.1088/1361-6528/ac3f5310.1088/1361-6528/ac3f53 ↗
82. 10.1016/j.mssp.2018.11.03310.1016/j.mssp.2018.11.033 ↗
83. 10.1038/s41551-019-0435-y10.1038/s41551-019-0435-y ↗
84. 10.1038/s41528-025-00385-910.1038/s41528-025-00385-9 ↗
85. 10.29026/oea.2023.22002010.29026/oea.2023.220020 ↗
86. 10.1016/j.polymertesting.2013.05.00110.1016/j.polymertesting.2013.05.001 ↗
87. 10.3390/molecules2517394610.3390/molecules25173946 ↗
88. 10.1021/acs.macromol.0c0198810.1021/acs.macromol.0c01988 ↗
89. 10.3390/polym1201003810.3390/polym12010038 ↗
90. 10.3390/polym1212289110.3390/polym12122891 ↗
91. 10.1038/s41467-020-19660-610.1038/s41467-020-19660-6 ↗
92. 10.1038/srep0718610.1038/srep07186 ↗
93. 10.3390/s2116555910.3390/s21165559 ↗