journal article·2026-01Open access

Positive Feedback Organic‐on‐Silicon Upconversion Devices

Raju Lampande, Jon‐Paul DesOrmeaux, Adrian Pizano, Urcan Guler, John W. Hamer, Noel C. Giebink

Advanced Science· Volume 13· Issue 5

Abstract

Abstract Positive feedback upconversion devices exhibit optoelectronic bistability and large photon‐to‐photon gain that can benefit applications ranging from night vision to neuromorphic image classification. Here, a hybrid device architecture is introduced that integrates a tandem organic light‐emitting diode (OLED) on top of an organic/Si heterojunction photodiode. These devices respond to near infrared light at wavelengths up λ ≈ 1.1 µm and exhibit a peak photon‐to‐photon upconversion gain of 9x when triggered with input light intensity <1 µW cm −2 . It is found that minimizing the capacitance of the photodiode is important for maximizing the upconversion response speed of the device, and that electrical crosstalk in pixelated devices must be overcome to prevent cascading effects where one activated pixel triggers many others. These results mark an important step for optoelectronic upconverters that can be integrated with Si microelectronics, and they establish a path to extend the responsivity further into the near infrared by moving to other inorganic semiconductor platforms such as Ge or InGaAs.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Luminescence and Fluorescent Materials · Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor Michigan 48109 USA

OLEDWorks LLC Rochester NY 14606 USA

RTX Technology Research Center East Hartford Connecticut 06108 USA

Funding

Defense Advanced Research Projects Agency

References (20)

Show source-provided references
1. 10.1038/nphoton.2006.510.1038/nphoton.2006.5 ↗
2. 10.1038/srep3232410.1038/srep32324 ↗
3. 10.1016/j.orgel.2016.01.03210.1016/j.orgel.2016.01.032 ↗
4. 10.1002/adma.20140435510.1002/adma.201404355 ↗
5. 10.1002/adma.20090331210.1002/adma.200903312 ↗
6. 10.1109/TED.2007.89846210.1109/TED.2007.898462 ↗
7. 10.1063/1.292749110.1063/1.2927491 ↗
8. 10.1002/adma.20120058710.1002/adma.201200587 ↗
9. 10.1063/5.016581810.1063/5.0165818 ↗
10. 10.1038/s41566-024-01520-010.1038/s41566-024-01520-0 ↗
11. 10.1038/s41467-024-55139-410.1038/s41467-024-55139-4 ↗
12. 10.1002/adma.20110271210.1002/adma.201102712 ↗
13. 10.1063/1.368487210.1063/1.3684872 ↗
14. Tournier F. · Proc. Int. Image Sensor Workshop · 2011 · 12 · R5
15. Koo C.‐H. · SPIE · 2007 · 6471
16. 10.1143/JJAP.46.245410.1143/JJAP.46.2454 ↗
17. Vogel U. · IEEE · 2018 · 90 · 90
18. 10.1016/j.nxnano.2025.10013210.1016/j.nxnano.2025.100132 ↗
19. 10.1088/978-0-7503-3235-410.1088/978-0-7503-3235-4 ↗
20. 10.1016/j.orgel.2011.01.02210.1016/j.orgel.2011.01.022 ↗