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journal article·2024-12Open access

Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics (Adv. Sci. 48/2024)

Guitian Qiu, Lingan Kong, Mengjiao Han, Qian Zhang, Majeed Ur Rehman, Jianxian Yi, Lede Xian, Xiankai Lin, Aumber Abbas, Jiwei Chen, Yingjie Luo, Wenbo Li, Zhongchao Wei, Hongyun Meng, Xiuliang Ma, Qijie Liang

Advanced Science· Volume 11· Issue 48
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Source abstract

Abstract

p-Type Doping In article number 2408634, Qian Zhang, Hongyun Meng, Qijie Liang, and co-workers demonstrate the conversion of n-type or ambipolar 2D semiconductors to p-type semiconductors through intralayer/interlayer codoping. The codoping not only enhances the carrier mobility, but also has excellent p-type doping stability. The construction of superior complementary metal-oxide-semiconductor inverters and logic gates further showcases its potential for application in 2D electronics.
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Research context

Electronic materials

OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Semiconductor Quantum Structures and Devices

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