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journal article·2021-10Open access

Direct Growth of van der Waals Tin Diiodide Monolayers (Adv. Sci. 20/2021)

Qian‐Qian Yuan, Fawei Zheng, Zhi‐Qiang Shi, Qi‐Yuan Li, Yang‐Yang Lv, Yanbin Chen, Ping Zhang, Shao‐Chun Li

Advanced Science· Volume 8· Issue 20
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Source abstract

Abstract

van der Waals SnI(2) Monolayers In article number 2100009, Ping Zhang, Shao‐Chun Li, and co‐workers demonstrate the direct growth of van der Waals SnI(2) monolayer, a new semiconducting material. The SnI(2) monolayer exhibits a band gap of 2.9 eV, and an indirect‐ to direct‐band gap transition occurs in the SnI2 bilayer, suggesting its potential application in future electronics/optoelectronics. [Image: see text]
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Electronic materials

OpenAlex topics: Advanced Photocatalysis Techniques

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