Universal Strategy for Improving Perovskite Photodiode Performance: Interfacial Built‐In Electric Field Manipulated by Unintentional Doping (Adv. Sci. 18/2021)
Source abstract
Abstract
High‐Performance Perovskite Photodiodes In article number 2101729, Dan Wu, Kai Wang, Aung Ko Ko Kyaw and co‐workers provide a general design guideline for high‐performance perovskite photodiodes through an interfacial electric field for efficient carrier separation and transport. The interfacial electric field can be modulated by unintentional doping of the perovskite, whose doping type and density can be controlled by the annealing time and temperature. [Image: see text]
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Research context
OpenAlex topics: Perovskite Materials and Applications
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