High‐Performance Synapse Arrays for Neuromorphic Computing via Floating Gate‐Engineered IGZO Synaptic Transistors (Adv. Sci. 21/2025)

Synaptic Transistors In article number 2500568, Soo-Yeon Lee, Junhyeong Park, and co-workers present high-performance indium-gallium-zinc-oxide (IGZO)-based synaptic transistors with the implementation of a synapse array. IGZO synaptic transistors exhibit enhanced electrical characteristics, including reduced operating voltages and longer retention, via floating-gate engineering. The synapse array demonstrates high yield and uniform synaptic characteristics, achieving high accuracy in image classification using a spiking neural network.