:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Changdong Chen; Bo‐Ru Yang; Gongtan Li; Hang Zhou; Bolong Huang; Qian Wu; Runze Zhan; Yong‐Young Noh; Takeo Minari; Shengdong Zhang; Shaozhi Deng; Henning Sirringhaus; Chuan Liu

doi:10.1002/advs.201970040

journal article·2019-04Open access

:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Changdong Chen, Bo‐Ru Yang, Gongtan Li, Hang Zhou, Bolong Huang, Qian Wu, Runze Zhan, Yong‐Young Noh, Takeo Minari, Shengdong Zhang, Shaozhi Deng, Henning Sirringhaus, Chuan Liu

Advanced Science· Volume 6· Issue 7

Publisher page Open full text

Source abstract

Abstract

In article number 1801189, Chuan Liu and co-workers present hydrogen doped IGZO thin-film transistors induced by simple SINX encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distribution is revealed as the cause for the ultra-high current and apparent device mobility, which is 40 times higher than the carrier mobility.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Lab of Opto‐Electronic Materials & Technologies, Guangdong Province Key Lab of Display Material and Technology, School of Electronics and Information Technology, Shunde International Joint Research Institute Sun Yat‐Sen University Guangdong 510275 China

Shenzhen Key Lab of Thin Film Transistor and Advanced Display, Peking University Shenzhen Graduate School Peking University Shenzhen 518055 China

Department of Applied Biology and Chemical Technology The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR

The Hong Kong Polytechnic University Shenzhen Research Institute Shenzhen 518057 China

Department of Energy and Materials Engineering Dongguk University 30 Pildong‐ro, 1 gil, Jung‐gu Seoul 04620 Republic of Korea

International Center for Materials Nanoarchitectonics (WPI‐MANA) National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 Japan

Department of Physics University of Cambridge Cambridge CB3 1HK UK

References

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