journal article·2026-02Open access

A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity

Fabia F. Athena, Cooper A. Voigt, Mengkun Tian, Anjan Goswami, Emily Toph, Moses Nnaji, Fanuel Mammo, Brent K. Wagner, Sungho Jeon, Wenshan Cai, Eric M. Vogel

Advanced Science· Volume 13· Issue 9

Abstract

Abstract Since the initial synthesis of van der Waals 2D indium selenide is first documented in 1957, five distinct polymorphs and their corresponding polytypes are identified. In this study, a unique phase of indium selenide is reported via Scanning Transmission Electron Microscopy (STEM) analysis in the synthesized large‐area films – which is named the phase. The quintuple layers of the phase, characterized by a unique zigzag atomic configuration with unequal indium‐selenium bond lengths from the middle selenium atom, are distinct from any other previously reported phase of indium selenide. Cross‐sectional STEM analysis has revealed that the layers exhibit intralayer shifting. It is found that indium selenide films with layers display electric‐field‐induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking of the inversion symmetry. Experimental observations of nonlinear optical phenomena – Second Harmonic Generation (SHG) responses further support this conclusion. This study reports a phase of indium selenide showing ferroelectricity over large areas at room temperature in a low‐dimensional limit.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Topological Materials and Phenomena · Photorefractive and Nonlinear Optics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA 30332. USA

Department of Electrical Engineering Stanford University Stanford CA 94305‐9505 USA

School of Materials Science and Engineering Georgia Institute of Technology Atlanta 30332 USA

Institute for Matter and Systems Georgia Institute of Technology Atlanta GA 30332 USA

Georgia Tech Research Institute Atlanta GA 30332 USA

Materials Science and Engineering University of Pennsylvania Philadelphia PA 19104 USA

Funding

Air Force Office of Scientific Research · National Science Foundation · Stanford Precourt Institute for Energy · IBM Research

References (41)

Show source-provided references
1. 10.1109/JSEN.2001.95483210.1109/JSEN.2001.954832 ↗
2. 10.1088/0960-1317/10/2/30710.1088/0960-1317/10/2/307 ↗
3. S.George K.Ma A.Aziz X.Li A.Khan S.Salahuddin M.‐F.Chang S.Datta J.Sampson S.Gupta V.Narayanan Nonvolatile memory design based on ferroelectric FETs. InProceedings of the 53rd Annual Design Automation Conference2016 Jun 5 (pp.1–6) https://dl.acm.org/doi/abs/10.1145/2897937.2898050.10.1145/2897937.2898050 ↗
4. 10.1002/adfm.20170046110.1002/adfm.201700461 ↗
5. 10.1039/C5CS00308C10.1039/C5CS00308C ↗
6. 10.1103/PhysRevLett.95.08720610.1103/PhysRevLett.95.087206 ↗
7. 10.1103/PhysRevLett.84.563610.1103/PhysRevLett.84.5636 ↗
8. 10.1103/PhysRevLett.99.17720210.1103/PhysRevLett.99.177202 ↗
9. 10.1038/s41467-023-38445-110.1038/s41467-023-38445-1 ↗
10. 10.1021/acs.accounts.8b0067710.1021/acs.accounts.8b00677 ↗
11. 10.1038/358136a010.1038/358136a0 ↗
12. 10.1103/PhysRev.17.47510.1103/PhysRev.17.475 ↗
13. 10.1038/s41578-022-00484-310.1038/s41578-022-00484-3 ↗
14. 10.1002/adma.20170356810.1002/adma.201703568 ↗
15. 10.1021/acs.chemrev.3c0012910.1021/acs.chemrev.3c00129 ↗
16. 10.1021/acs.nanolett.7b0219810.1021/acs.nanolett.7b02198 ↗
17. 10.1021/acs.nanolett.5b0159010.1021/acs.nanolett.5b01590 ↗
18. 10.1038/ncomms1495610.1038/ncomms14956 ↗
19. 10.1126/sciadv.aar772010.1126/sciadv.aar7720 ↗
20. 10.1021/acs.nanolett.7b0485210.1021/acs.nanolett.7b04852 ↗
21. 10.1002/adfm.20180373810.1002/adfm.201803738 ↗
22. Hu H. · Appl. Phys. Lett. · 2019 · 114 · 25
23. 10.1002/advs.20210071310.1002/advs.202100713 ↗
24. 10.1088/0034-4885/48/12/00210.1088/0034-4885/48/12/002 ↗
25. 10.1038/s41565-022-01257-310.1038/s41565-022-01257-3 ↗
26. 10.1038/s41565-022-01257-310.1038/s41565-022-01257-3 ↗
27. 10.1126/science.abp827810.1126/science.abp8278 ↗
28. Athena F. F. · 2024 · 1
29. 10.1002/admi.20190214510.1002/admi.201902145 ↗
30. 10.1063/5.001494510.1063/5.0014945 ↗
31. 10.1038/s41928-019-0338-710.1038/s41928-019-0338-7 ↗
32. 10.1038/s41586-018-0336-310.1038/s41586-018-0336-3 ↗
33. 10.3390/nano1217302610.3390/nano12173026 ↗
34. 10.1080/00150193.2019.165249310.1080/00150193.2019.1652493 ↗
35. 10.1063/1.507999910.1063/1.5079999 ↗
36. 10.1038/srep0553010.1038/srep05530 ↗
37. 10.1103/PhysRevB.87.20140110.1103/PhysRevB.87.201401 ↗
38. 10.1021/cm502895h10.1021/cm502895h ↗
39. 10.1021/acs.inorgchem.7b0268910.1021/acs.inorgchem.7b02689 ↗
40. 10.1186/s40679-017-0042-510.1186/s40679-017-0042-5 ↗
41. F. D.Pena E.Prestat V. T.Fauske P.Burdet J.Lähnemann P.Jokubauskas T.Furnival M.Nord T.Ostasevicius K. E.MacArthur hyperspy/hyperspy: Release v1. 7.3 https://ui.adsabs.harvard.edu/abs/2022zndo7263263D/abstract.