Bottom Contact 100 nm Channel‐Length α‐In₂Se₃ In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023)

In-Plane Ferroelectric Memory In article number 2303032 by Yutaka Majima and co-workers, in-plane (IP) ferroelectric memory effect of a 100 nm channel-length 2D ferroelectric semiconductor α-In2Se3 stamped onto nanogap electrodes on Si/SiO2 is demonstrated. The non-volatile memory characteristics with IP polarization including the on/off ratio reaching 103, stable retention lasting 17 hours, and endurance over 1200 cycles suggest a wide range of memory applications utilizing the lateral bottom contact structure.