Solid State Defect Emitters With no Electrical Activity
Source abstract
Abstract
Abstract Point defects may introduce defect levels into the fundamental bandgap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in‐gap defect levels and states automatically lower the threshold energy of optical excitation associated with the optical gap of the host semiconductor. It is, therefore, a common assumption that solid‐state defect emitters in semiconductors ultimately alter the conductivity of the host. This study demonstrate, on a particular defect in 4H silicon carbide, that an unrecognized class of point defects exists that are optically active but electrically inactive in the ground state.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Integrated Circuit Science and Engineering Tianjin University of Technology Tianjin 300384 China
Beijing Computational Science Research Center Beijing 100193 China
HUN‐REN Wigner Research Centre for Physics P.O. Box 49 Budapest H‐1525 Hungary
Department of Atomic Physics Institute of Physics Budapest University of Technology and Economics Műegyetem rakpart 3. Budapest H‐1111 Hungary
Department of Chemistry and Biochemistry University of California Los Angeles Los Angeles CA 90095 USA
Department of Physics Beijing Normal University Beijing 100875 China
MTA‐WFK Lendület “Momentum” Semiconductor Nanostructures Research Group P.O. Box 49 Budapest H‐1525 Hungary
Funding
European Commission · National Key Research and Development Program of China · National Natural Science Foundation of China · NSAF Joint Fund
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