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journal article·2024-11Open access

Lateral Electronic Junction of a Single Ultrathin Silicon Induced by Interfacial Dipole of Self‐Assembled Monolayer

Junghyup Han, Won Hyung Lee, Junwoo Park, Huding Jin, Yong Hyun Cho, Seungyeon Yu, Lianghui Li, Jaewon Lee, Gunhoo Woo, Taesung Kim, Youn Sang Kim

Advanced Science· Volume 11· Issue 41
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Abstract

Abstract Interface engineering is pivotal for enhancing the performance and stability of devices with layered structures, including solar cells, electronic devices, and electrochemical systems. Incorporating the interfacial dipole between the bulk layers effectively modulates the energy level difference at the interface and does not significantly influence adjacent layers overall. However, interfaces can drastically affect adjoining layers in ultrathin devices, which are essential for next‐generation electronics with high integrity, excellent performance, and low power consumption. In particular, the interfacial effect is pronounced in ultrathin semiconductors, which have a weak electric field screening effect. Herein, the substantial interfacial impact on the ultrathin silicon is shown, the p‐ to n‐type inversion of the semiconductor solely through the deposition of a self‐assembled monolayer (SAM) without external bias. The effects of SAMs with different interfacial dipoles are investigated by using Hall measurement and surface analytic techniques, such as UPS, XPS, and KPFM. Furthermore, the lateral electronic junction of the ultrathin silicon is engineered by the regioselective deposition of SAMs with opposite dipoles, and the device exhibits rectification behavior. When the interfacial dipole of SAM is manipulated, the rectification ratio changes sensitively, and thus the fabricated diode shows potential to be developed as a sensing platform.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: ZnO doping and properties · Nanowire Synthesis and Applications · Electronic and Structural Properties of Oxides

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Affiliations

Department of Chemical and Biological Engineering College of Engineering Seoul National University 1 Gwanak‐ro, Gwanak‐gu Seoul 08826 Republic of Korea

Program in Nano Science and Technology Graduate School of Convergence Science and Technology Seoul National University 1 Gwanak‐ro, Gwanak‐gu Seoul 08826 Republic of Korea

Samsung SDI Co. Ltd. 130 Samsung‐ro, Yeongtong‐gu Suwon‐si Gyeonggi‐Do 16678 Republic of Korea

Department of Chemistry Sogang University 35 Baekbeom‐ro, Mapo‐gu Seoul 04107 Republic of Korea

Institute of Chemical Processes Seoul National University 1 Gwanak‐ro, Gwanak‐gu Seoul 08826 Republic of Korea

Department of Chemical Engineering University of California Santa Barbara CA 93106 USA

SKKU Advanced Institute of Nanotechnology Sungkyunkwan University (SKKU) 2066 Seobu‐ro, Jangan‐gu Suwon‐si Gyeonggi‐Do 16419 Republic of Korea

Department of Nano Science and Technology Sungkyunkwan University 2066 Seobu‐ro, Jangan‐gu Suwon‐si Gyeonggi‐Do 16419 Republic of Korea

School of Mechanical Engineering Sungkyunkwan University 2066 Seobu‐ro, Jangan‐gu Suwon‐si Gyeonggi‐Do 16419 Republic of Korea

Department of Semiconductor Convergence Engineering Sungkyunkwan University 2066 Seobu‐ro, Jangan‐gu Suwon‐si Gyeonggi‐Do 16419 Republic of Korea

Advanced Institute of Convergence Technology 145 Gwanggyo‐ro, Yeongtong‐gu Suwon‐si Gyeonggi‐Do 16229 Republic of Korea

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