DataVXAdvanced SciencePaper
journal article·2019-11Open access

Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)

Daniel Glass, Emiliano Cortés, Sultan Ben‐Jaber, Thomas Brick, William J. Peveler, Christopher S. Blackman, Christopher R. Howle, Raul Quesada‐Cabrera, Ivan P. Parkin, Stefan A. Maier

Advanced Science· Volume 6· Issue 22
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Source abstract

Abstract

Surface oxygen vacancy defects are some of the most reactive sites but are notoriously difficult to detect, often healing upon exposure to air. In article number 1901841, Ivan P. Parkin, Stefan A. Maier, and co-workers show how photo-induced enhanced Raman spectroscopy (PIERS) can be used to indirectly track vacancy formation and healing of photo-induced vacancies under ambient conditions on metal oxide semiconductors.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Electron and X-Ray Spectroscopy Techniques · Industrial Vision Systems and Defect Detection · Semiconductor materials and devices

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Affiliations

The Blackett Laboratory Department of Physics Imperial College London London SW7 2AZ UK

Department of Chemistry University College London 20 Gordon St London WC1H 0AJ UK

Chair in Hybrid Nanosystems Nanoinsitute Munich Faculty of Physics Ludwig Maximilians Universität München 80539 München Germany

Department of Forensics Science King Fahad Security Collage Riyadh 11461 Saudi Arabia

School of Chemistry Joseph Black Building University of Glasgow Glasgow G12 8QQ UK

Defence Science and Technology Laboratory Porton Down Salisbury Wiltshire SP4 0JQ UK

References

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