All‐Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In‐Memory Computing
Source abstract
Abstract
ABSTRACT All‐optical in‐memory computing is emerging as a critical technology for next‐generation energy‐efficient and high‐speed information processing because it avoids frequent optical‐electrical‐optical conversions and integrates sensing, processing, and memory within a single device. Here, we report the demonstration of bidirectional polarization switching in a van der Waals heterostructure composed of ferroelectric CuInP 2 S 6 (CIPS) and semiconducting MoS 2 . Wavelength‐tunable excitation (660–405 nm) enables robust, bidirectional polarization reversal through the interaction between the photogenerated charges in MoS 2 /CIPS heterostructure and ferroelectric polarization charges in CIPS. Two wavelength‐dependent carrier dynamic mechanisms were established specifically for excitations below and above the CIPS bandgap. These mechanisms result in opposite charge accumulation at the interface, leading to opposite polarization switching directions. The device demonstrates high‐performance all‐optical nonvolatile memory. Furthermore, it emulates all‐optical controlled retina‐like synaptic plasticity, including paired‐pulse facilitation/inhibition, short‐term and long‐term potentiation and depression, and learning‐forgetting behaviours, with wavelength‐selective long‐term potentiation and depression enabling neuromorphic image recognition. Additionally, the single device implements reconfigurable all‐optical controlled Boolean logic gates.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon South Korea
Department of Nano Science and Technology Sungkyunkwan University Suwon South Korea
IMEC Heverlee Belgium
Department of Electrical and Computer Engineering Sungkyunkwan University Suwon South Korea
Department of Nano Engineering Sungkyunkwan University Suwon South Korea
References (45)
Show source-provided references
1. 10.1002/adma.20241078310.1002/adma.202410783 ↗
2. 10.1002/aisy.20200011910.1002/aisy.202000119 ↗
3. 10.1002/adma.20200420710.1002/adma.202004207 ↗
4. 10.1016/j.xcrp.2022.10103710.1016/j.xcrp.2022.101037 ↗
5. 10.1021/acsami.3c1001010.1021/acsami.3c10010 ↗
6. 10.1021/acsnano.1c0465410.1021/acsnano.1c04654 ↗
7. 10.1021/acsnano.9b0768710.1021/acsnano.9b07687 ↗
8. 10.1038/s41928‐022‐00847‐210.1038/s41928‐022‐00847‐2 ↗
9. 10.1002/adfm.20200420610.1002/adfm.202004206 ↗
10. 10.1002/adma.20180622710.1002/adma.201806227 ↗
11. 10.1021/acsnano.4c0227810.1021/acsnano.4c02278 ↗
12. 10.1002/adma.20241078310.1002/adma.202410783 ↗
13. 10.1002/adma.20241426110.1002/adma.202414261 ↗
14. 10.1021/acsnano.3c0216710.1021/acsnano.3c02167 ↗
15. 10.1021/acsami.2c2016610.1021/acsami.2c20166 ↗
16. 10.1021/acsnano.0c0892110.1021/acsnano.0c08921 ↗
17. 10.1021/acsami.4c0209210.1021/acsami.4c02092 ↗
18. 10.1021/acs.nanolett.3c0435810.1021/acs.nanolett.3c04358 ↗
19. 10.1016/j.nanoen.2019.10400010.1016/j.nanoen.2019.104000 ↗
20. 10.1002/smll.20230606810.1002/smll.202306068 ↗
21. 10.1002/adfm.20240967710.1002/adfm.202409677 ↗
22. 10.1002/adfm.20210797310.1002/adfm.202107973 ↗
23. 10.1002/adom.20220040910.1002/adom.202200409 ↗
24. 10.1002/adma.20210501710.1002/adma.202105017 ↗
25. 10.1002/advs.20210463210.1002/advs.202104632 ↗
26. 10.1002/aelm.20210140210.1002/aelm.202101402 ↗
27. 10.1002/adfm.20200159810.1002/adfm.202001598 ↗
28. 10.1002/adfm.20200558210.1002/adfm.202005582 ↗
29. 10.1021/acsami.3c0009210.1021/acsami.3c00092 ↗
30. 10.1038/ncomms1080810.1038/ncomms10808 ↗
31. 10.1002/advs.20230567910.1002/advs.202305679 ↗
32. 10.1038/s41467-018-05640-410.1038/s41467-018-05640-4 ↗
33. 10.1002/adma.20221159810.1002/adma.202211598 ↗
34. 10.1038/s41467-021-26200-310.1038/s41467-021-26200-3 ↗
35. 10.1021/nn303772b10.1021/nn303772b ↗
36. 10.1021/acsnano.9b0768710.1021/acsnano.9b07687 ↗
37. 10.1038/nnano.2014.15010.1038/nnano.2014.150 ↗
38. 10.1021/nn505736z10.1021/nn505736z ↗
39. In‐Plane Polarization Induced Depletion, Photovoltaic and Memory Effects in Ferroelectric Junction Field‐Effect Transistor
40. 10.1021/acsami.3c1269510.1021/acsami.3c12695 ↗
41. 10.1063/1.490146710.1063/1.4901467 ↗
42. 10.1063/5.002209710.1063/5.0022097 ↗
43. 10.1146/annurev.physiol.64.092501.11454710.1146/annurev.physiol.64.092501.114547 ↗
44. 10.1007/s11571‐011‐9158‐910.1007/s11571‐011‐9158‐9 ↗
45. 10.1021/acsnano.3c0577110.1021/acsnano.3c05771 ↗