DataVXAdvanced SciencePaper
journal article·2026-02Open access

Unraveling Band‐Tail Effects on Temperature‐Dependent Emission in GaAsBi via Photoluminescence

Bing Yan, Xiren Chen, Liangqing Zhu, Lijuan Wang, Man Wang, Shumin Wang, Jun Shao

Advanced Science· Volume 13· Issue 9
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Source abstract

Abstract

Abstract The effect of Bi on the emission temperature sensitivity of GaAsBi remains a topic of debate, which hinders the design of optoelectronic devices. Band‐tail states, which are critical for GaAsBi performance, are suspected to drive the discrepancy, but their effect remains unclear. This work resolves the key debate using an innovative dual‐spectroscopy approach that combines temperature‐dependent photoluminescence (PL) and transmission spectroscopy to decouple the contributions of band‐tail states from intrinsic band‐edge behavior. For GaAs 1‐ x Bi x ( x = 0.033, 0.048), the energy‐temperature coefficients derived from transmission are composition‐independent, while those derived from PL decrease by ≈40% with higher Bi content. This apparent contradiction originates from the thermalized carrier redistribution between the valence band and band‐tail states at elevated temperatures and the intrinsic band‐edge thermal sensitivity in the transmission spectra. The dual‐spectroscopy approach is proven to be an effective method for clarifying the effects of band‐tail states on the thermal sensitivity, and provides valuable guidance for the design of stable GaAsBi optoelectronic devices.
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Research context

Electronic materials

OpenAlex topics: Semiconductor Quantum Structures and Devices · Optical properties and cooling technologies in crystalline materials · Thermal Radiation and Cooling Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics and Engineering Henan University of Science and Technology Luoyang 471023 China

National Key Laboratory of Infrared Detection Technologies Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

Key Laboratory of Infrared Imaging Material and Detectors Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

Engineering Research Center for Nanophotonics and Advanced Instrument Ministry of Education East China Normal University Shanghai 200062 China

State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

Photonic Laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology Göteborg S‐412 96 Sweden

Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou 310024 China

Funding

National Natural Science Foundation of China · Shanghai Rising-Star Program

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