High‐Performance Micro‐LED Displays via Etching‐Damage‐Free Pixelation Strategy for Multifunctional Integrated Applications

Abstract As Micro‐LED sizes shrink, luminescence efficiency drops significantly due to sidewall damage from plasma etching. This study introduces a precision‐selective ion implantation (PSII) strategy to boost external quantum efficiency (EQE) and brightness of Micro‐LED at high current density, vital for applications like augmented reality (AR) and optical communication, instead of relying on sidewall passivation for low current density efficiency. PSII's effects is systematically evaluated on electrical isolation and photoelectric properties. Results demonstrate that Micro/Nano‐LED arrays with a pixel density up to 25,400 ppi are achieved through the PSII strategy. Turn‐off leakage current is reduced, with improved carrier injection efficiency, EQE, and luminance. At 10,000 A cm ^{− 2} , EQE and brightness increased by ≈30% and ≈25%, respectively. Moreover, lattice damage induced by ion bombardment enhanced UV and blue light absorption while suppressing visible emission, which benefits photodetectors (PDs). Demonstrations in AR displays, optical communication systems, and UV PDs showed superior performance compared to etching‐based methods. The modulation bandwidth reached 131.2 MHz, a 30% improvement, and PD photocurrent increased by ≈ 90%. This PSII‐based pixelation strategy enables high‐brightness Micro‐LED displays with significant potential for multifunctional integrated applications, offering a robust alternative to traditional etching processes for advanced optoelectronic devices.