Source abstract
Abstract
Abstract Quantum dot sensitized solar cells (QDSCs) represent a promising third‐generation photovoltaic technology, boasting a high theoretical efficiency of 44% and cost efficiency. However, their practical efficiency is constrained by reduced photovoltage (Voc) and fill factor (FF). One primary reason is the inefficient charge transfer and elevated recombination rates at the counter electrode (CE). In this work, a novel CE composed of a titanium mesh loaded with Co,N─C@MoS2 is introduced for the assembly of QDSCs. The incorporation of nanosized MoS2 enhances the density of catalytic sites, while the Co,N─C component ensures high conductivity and provides a substantial active surface area. Additionally, the titanium mesh's 3D structure serves as an effective electrical conduit, facilitating rapid electron transfer from the external circuit to the composite. These improvements in catalytic activity, charge transfer rate, and stability of the CE significantly enhance the photovoltaic performance of QDSCs. The optimized cells achieve a groundbreaking power conversion efficiency (PCE) of 16.39%, accompanied by a short‐circuit current density (Jsc) of 27.26 mA cm−2, Voc of 0.818 V, and FF of 0.735. These results not only offer a new strategy for designing electrodes with high catalytic activity but also underscore the promising application of the Co,N─C@MoS2 composite in enhancing QDSC technology.
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Research context
OpenAlex topics: Advanced Photocatalysis Techniques · Quantum Dots Synthesis And Properties · ZnO doping and properties
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Affiliations
School of Science Xi'an Polytechnic University Xi'an Shanxi 710048 China
Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China
College of Chemistry and Chemical Engineering Xinjiang Normal University Xinjiang Uygur Autonomous Regions Urumqi 830054 China
Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province China Jiliang University Hangzhou 310018 China
School of Materials Science and Engineering South China University of Technology Guangzhou 510641 China
Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China
References (43)
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