Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO 2 /Si(100) for Monolithic Optoelectronic Integration
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · 2D Materials and Applications · Metal and Thin Film Mechanics
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Affiliations
Research and Development Center for Semiconductor Lighting Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China
Center for Nanochemistry (CNC) Beijing Science and Engineering Center for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
Beijing Graphene Institute (BGI) Beijing 100095 P. R. China
Electron Microscopy Laboratory and International Center for Quantum Materials School of Physics Peking University Beijing 100871 P. R. China
State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
College of Energy Soochow Institute for Energy and Materials InnovationS (SIEMIS) Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies Soochow University Suzhou 215006 P. R. China
Funding
Natural Science Foundation of Beijing Municipality · National Key Research and Development Program of China · National Natural Science Foundation of China