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journal article·2021-04Open access

Direct Growth of Highly Conductive Large‐Area Stretchable Graphene

Yire Han, Byeong‐Ju Park, Ji‐Ho Eom, Venkatraju Jella, Swathi Ippili, S. V. N. Pammi, Jin‐Seok Choi, Hyunwoo Ha, Hyuk Choi, Cheolho Jeon, Kangho Park, Hee‐Tae Jung, Sungmi Yoo, Hyun You Kim, Yun Ho Kim, Soon‐Gil Yoon

Advanced Science· Volume 8· Issue 7
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Source abstract

Abstract

Abstract The direct synthesis of inherently defect‐free, large‐area graphene on flexible substrates is a key technology for soft electronic devices. In the present work, in situ plasma‐assisted thermal chemical vapor deposition is implemented in order to synthesize 4 in. diameter high‐quality graphene directly on 10 nm thick Ti‐buffered substrates at 100 °C. The in situ synthesized monolayer graphene displays outstanding stretching properties coupled with low sheet resistance. Further improved mechanical and electronic performances are achieved by the in situ multi‐stacking of graphene. The four‐layered graphene multi‐stack is shown to display an ultralow resistance of ≈6 Ω sq−1, which is consistently maintained during the harsh repeat stretching tests and is assisted by self‐p‐doping under ambient conditions. Graphene‐field effect transistors fabricated on polydimethylsiloxane substrates reveal an unprecedented hole mobility of ≈21 000 cm2 V−1 s−1 at a gate voltage of −4 V, irrespective of the channel length, which is consistently maintained during the repeat stretching test of 5000 cycles at 140% parallel strain.
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Research context

NanomaterialsElectronic materialsMaterials processing

OpenAlex topics: Graphene research and applications · Advanced Sensor and Energy Harvesting Materials · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering Chungnam National University Daeduk Science Town Daejeon 34134 Republic of Korea

P&T Division SK Hynix Cheongju 28433 Republic of Korea

Analysis Center for Research Advancement (KARA) Korea Advanced Institute of Science and Technology 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea

Advanced Nano‐Surface Group Korea Basic Science Institute (KBSI) 169‐148 Gwahangno, Yuseong‐gu Daejeon 34133 Republic of Korea

Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology Daejeon 34141 Republic of Korea

Advanced Materials Division Korea Research Institute of Chemical Technology Daejeon 34114 Republic of Korea

Department of Chemical Convergence Materials and Processes KRICT School University of Science and Technology Daejeon 34114 Republic of Korea

Funding

Korea Research Institute of Chemical Technology · National Research Foundation of Korea

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