journal article·2023-06Open access

New Ternary Blend Strategy Based on a Vertically Self‐Assembled Passivation Layer Enabling Efficient and Photostable Inverted Organic Solar Cells

Soyeong Jeong, Aniket Rana, Ju‐Hyeon Kim, Deping Qian, Kiyoung Park, Jun‐Ho Jang, Joel Luke, Sooncheol Kwon, Jehan Kim, Pabitra Shakya Tuladhar, Ji‐Seon Kim, Kwanghee Lee, James R. Durrant, Hongkyu Kang

Advanced Science· Volume 10· Issue 17

Abstract

Abstract Herein, a new ternary strategy to fabricate efficient and photostable inverted organic photovoltaics (OPVs) is introduced by combining a bulk heterojunction (BHJ) blend and a fullerene self‐assembled monolayer (C60‐SAM). Time‐of‐flight secondary‐ion mass spectrometry ‐ analysis reveals that the ternary blend is vertically phase separated with the C60‐SAM at the bottom and the BHJ on top. The average power conversion efficiency ‐ of OPVs based on the ternary system is improved from 14.9% to 15.6% by C60‐SAM addition, mostly due to increased current density (Jsc) and fill factor ‐. It is found that the C60‐SAM encourages the BHJ to make more face‐on molecular orientation because grazing incidence wide‐angle X‐ray scattering ‐ data show an increased face‐on/edge‐on orientation ratio in the ternary blend. Light‐intensity dependent Jsc data and charge carrier lifetime analysis indicate suppressed bimolecular recombination and a longer charge carrier lifetime in the ternary system, resulting in the enhancement of OPV performance. Moreover, it is demonstrated that device photostability in the ternary blend is enhanced due to the vertically self‐assembled C60‐SAM that successfully passivates the ZnO surface and protects BHJ layer from the UV‐induced photocatalytic reactions of the ZnO. These results suggest a new perspective to improve both performance and photostability of OPVs using a facial ternary method.
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Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry and Centre for Processable Electronics Imperial College London White City Campus London W12 0BZ UK

School of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) Gwangju 61005 Republic of Korea

Heeger Center for Advanced Materials (HCAM) Gwangju Institute of Science and Technology (GIST) Gwangju 61005 Republic of Korea

Department of Physics and Centre for Processable Electronics Imperial College London London SW7 2AZ UK

Department of Energy and Materials Engineering Dongguk University Seoul 04620 Republic of Korea

Pohang Accelerator Laboratory (PAL) Pohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea

Research Institute for Solar and Sustainable Energies (RISE) Gwangju 61005 Republic of Korea

Funding

National Research Foundation

References (37)

Show source-provided references
1. 10.1002/aenm.20200076510.1002/aenm.202000765 ↗
2. 10.1038/s41578-019-0093-410.1038/s41578-019-0093-4 ↗
3. 10.1002/aenm.20200274610.1002/aenm.202002746 ↗
4. 10.1002/aenm.20200357010.1002/aenm.202003570 ↗
5. 10.1039/D1EE01220G10.1039/D1EE01220G ↗
6. 10.1039/D1TA10707K10.1039/D1TA10707K ↗
7. 10.1016/j.joule.2019.01.00410.1016/j.joule.2019.01.004 ↗
8. 10.1016/j.scib.2020.01.00110.1016/j.scib.2020.01.001 ↗
9. 10.1039/D0NR07788G10.1039/D0NR07788G ↗
10. 10.1002/solr.20210081910.1002/solr.202100819 ↗
11. 10.1038/s41563-022-01244-y10.1038/s41563-022-01244-y ↗
12. 10.1002/adfm.20210455210.1002/adfm.202104552 ↗
13. 10.1039/C9TA05235F10.1039/C9TA05235F ↗
14. 10.1016/j.nanoen.2021.10639910.1016/j.nanoen.2021.106399 ↗
15. 10.1039/C5CS00593K10.1039/C5CS00593K ↗
16. 10.1039/C7EE02983G10.1039/C7EE02983G ↗
17. 10.1021/nn404687s10.1021/nn404687s ↗
18. 10.1039/C5EE02912K10.1039/C5EE02912K ↗
19. 10.1002/advs.20190325910.1002/advs.201903259 ↗
20. 10.1063/1.240289010.1063/1.2402890 ↗
21. 10.1063/1.221227010.1063/1.2212270 ↗
22. 10.1016/j.tsf.2004.10.01810.1016/j.tsf.2004.10.018 ↗
23. 10.1039/C9TA07417A10.1039/C9TA07417A ↗
24. 10.1039/C9MH00379G10.1039/C9MH00379G ↗
25. 10.1021/acsaem.0c0158710.1021/acsaem.0c01587 ↗
26. 10.1021/acs.jpclett.1c0027610.1021/acs.jpclett.1c00276 ↗
27. 10.1016/j.scib.2019.10.01910.1016/j.scib.2019.10.019 ↗
28. 10.1039/b808004f10.1039/b808004f ↗
29. 10.1021/am100238e10.1021/am100238e ↗
30. 10.1063/1.302809410.1063/1.3028094 ↗
31. 10.1039/b408857n10.1039/b408857n ↗
32. 10.1002/adma.20170427110.1002/adma.201704271 ↗
33. 10.1063/1.217042410.1063/1.2170424 ↗
34. 10.1039/D0EE01338B10.1039/D0EE01338B ↗
35. 10.1002/adma.20200538610.1002/adma.202005386 ↗
36. 10.1021/acsenergylett.0c0060410.1021/acsenergylett.0c00604 ↗
37. 10.1002/solr.20190054010.1002/solr.201900540 ↗