Piezo‐Acoustic Resistive Switching Behaviors in High‐Performance Organic–Inorganic Hybrid Perovskite Memristors

Abstract Memristors are regarded as promising candidates for breaking the problems including high off‐chip memory access delays and the hash rate cost of frequent data moving induced by algorithms for data‐intensive applications of existing computational systems. Recently, organic–inorganic halide perovskites (OIHPs) have been recognized as exceptionally favorable materials for memristors due to ease of preparation, excellent electrical conductivity, and structural flexibility. However, research on OIHP‐based memristors focuses on modulating resistive switching (RS) performance through electric fields, resulting in difficulties in moving away from complex external circuits and wire connections. Here, a multilayer memristor has been constructed with eutectic gallium and indium (EGaIn)/ MAPbI₃/poly(3,4‐ethylenedioxythiophene): poly(4‐styrenesulphonate) (PEDOT: PSS)/indium tin oxide (ITO) structure, which exhibits reproducible and reliable bipolar RS with low SET/RESET voltages, stable endurance, ultrahigh average ON/OFF ratio, and excellent retention. Importantly, based on ion migration activated by sound‐driven piezoelectric effects, the device exhibits a stable acoustic response with an average ON/OFF ratio greater than 10³, thus realizing non‐contact, multi‐signal, and far‐field control in RS modulation. This study provides a single‐structure multifunctional memristor as an integrated architecture for sensing, data storage, and computing.