Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy
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Abstract
Abstract The droplet epitaxy of indium gallium nitride quantum dots (InGaN QDs), the formation of In–Ga alloy droplets in ultra-high vacuum and then surface nitridation by plasma treatment, is firstly investigated by using plasma-assisted molecular beam epitaxy. During the droplet epitaxy process, in-situ reflection high energy electron diffraction patterns performs the amorphous In–Ga alloy droplets transform to polycrystalline InGaN QDs, which are also confirmed by the characterizations of transmission electron microscopy and X-ray photoelectron spectroscopy. The substrate temperature, In–Ga droplet deposition time, and duration of nitridation are set as parameters to study the growth mechanism of InGaN QDs on Si. Self-assembled InGaN QDs with a density of 1.33 × 1011 cm−2 and an average size of 13.3 ± 3 nm can be obtained at the growth temperature of 350 °C. The photoluminescence emissions of uncapped InGaN QDs in wavelength of the visible red (715 nm) and infrared region (795 and 857 nm) are observed. The formation of high-indium composition of InGaN QDs via droplet epitaxy technique could be applied in long wavelength optoelectronic devices.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Semiconductor materials and devices
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References (35)
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