FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design
Source abstract
Abstract
In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel. The overlapping gate and source contact regions create a strong and uniform electric field in the channel. Furthermore, the metal–semiconductor Schottky junction in the intrinsic source region induces the required carriers without the need for doping. This innovative design achieves both a steeper subthreshold swing ( SS ) and a higher ON-state current ( I ON ). Using calibration-based simulations with Sentaurus TCAD, we compare the performance of three newly designed device structures: the conventional Nanosheet Tunnel Field-Effect Transistor (NS-TFET), the Nanosheet Line-tunneling TFET (NS-LTFET), and the proposed FS-iTFET. Simulation results show that, compared to the traditional NS-TFET, the NS-LTFET with its full line-tunneling structure improves the average subthreshold swing ( SS AVG ) by 19.2%. More significantly, the FS-iTFET, utilizing the Schottky-inductive source, further improves the SS AVG by 49% and achieves a superior I ON / I OFF ratio. Additionally, we explore the impact of Trap-Assisted Tunneling on the performance of the three different integrations. The FS-iTFET consistently demonstrates superior performance across various metrics, highlighting its potential in advancing tunnel field-effect transistor technology.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis
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References (37)
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