journal article·2025-10-14Open access

Influence of pixel size and gap on the optoelectronic performance of micro-LED arrays for visible light communication using boron ion implantation

Po-Chiao Wang, Chien-Chi Huang, Chien-Chung Lin, Ching-Ho Tien, Hao-Chung Kuo, Tae-Yeon Seong, Ray-Hua Horng

Discover Nano· Volume 20· Issue 1

Abstract

This study investigated the impact of pixel size and inter-pixel gap width on the optoelectronic performance of micro-LED arrays, with a particular focus on their application in visible light communication (VLC). Boron ion implantation was employed to define pixel emission areas and achieve effective channel insulation due to boron's small atomic radius and its ability to suppress electrical conductivity in implanted regions without significantly degrading the optical performance. The micro-LED arrays, with a total emitting area of 14,400 μm², incorporated pixel sizes of 5 μm, 8 μm, and 10 μm, alongside gap widths of 2 μm, 4 μm, 6 μm, and 8 μm. The experimental results demonstrated a consistent increase in light output power and external quantum efficiency (EQE) with decreasing gap widths, which is attributed to reduced leakage currents and minimized non-radiative recombination losses. The small size of boron ions allowed for precise electrical isolation between pixels without affecting emission properties, enabling accurate evaluation of size-dependent performance. In VLC applications, pixel size and gap width not only influenced light output power and EQE but also impacted bandwidth, full-width at half-maximum, and data transmission rates. The 12 × 12 array with a 10 μm pixel size achieved the best VLC performance, with a bandwidth of 171.88 MHz at a current density of 347.2 A/cm².
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Optical Wireless Communication Technologies · Semiconductor Lasers and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (31)

Show source-provided references
1. James Singh K, Huang YM, Ahmed T, Liu AC, Huang Chen SW, Liou FJ, Wu T, Lin CC, Chow CW, Lin GR, Kuo HC. Micro-LED as a promising candidate for high-speed visible light communication. Appl Sci. 2020;10(20):7384. https://doi.org/10.3390/app10207384.10.3390/app10207384 ↗
2. Ho PW, Cheng CH, Liao YS, Chi YC, Sadhu AS, Matsumoto A, Akahane K, Chen LY, Kuo HC, Lin GR. Blue micro-LED with a red/green blended polymer film for 3.5-Gbps visible light communication employing adaptive SNR-Flattening algorithm. Next Nanotechnol. 2024;5:100043. https://doi.org/10.1016/j.nxnano.2024.100043.10.1016/j.nxnano.2024.100043 ↗
3. Xu F, Jin Z, Tao T, Tian P, Wang G, Liu X, Zhi T, Yan Q, Pan D, Xie Z, Xu K, Liu B, Zhang R. C-plane blue micro-LED with 1.53 ghz bandwidth for high-speed visible light communication. IEEE Electron Device Lett. 2022;43(6):910–3. https://doi.org/10.1109/LED.2022.3168314.10.1109/LED.2022.3168314 ↗
4. Yu L, Wang L, Hao Z, Luo Y, Sun C, Xiong B, Han Y, Wang J, Li H. High-speed micro-LEDs for visible light communication: challenges and progresses. Semicond Sci Technol. 2021;37(2):023001. https://doi.org/10.1088/1361-6641/ac40ec.10.1088/1361-6641/ac40ec ↗
5. Liu Y, Wang G, Feng F, Zhanghu M, Yuan Z, Li Z, Xu K, Kwok HS, Liu Z. Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays, PHOTONIX, 5(1), 23 (2024). DOI10.1186/s43074-024-00137-4.10.1186/s43074-024-00137-4 ↗
6. Daami A, Olivier F, Dupré L, Henry F, Templier F. Electro-optical size-dependence investigation in GaN micro-LED devices. SID Symp Dig Tech Pap. 2018;49(1):790–3.10.1002/sdtp.12325 ↗
7. Yu H, Memon MH, Wang D, Ren Z, Zhang H, Huang C, Tian M, Sun H, Long S. AlGaN-based deep ultraviolet micro-LED emitting at 275 Nm. Opt Lett. 2021;46(13):3271–4. https://doi.org/10.1364/OL.431933.10.1364/OL.431933 ↗
8. Olivier F, Tirano S, Dupré L, Aventurier B, Largeron C, Templier F. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application. J Lumin. 2017;191(B):112–6. https://doi.org/10.1016/j.jlumin.2016.09.052.10.1016/j.jlumin.2016.09.052 ↗
9. Boussadi Y, Rochat N, Barnes JP, Bakir BB, Ferrandis P, Masenelli B, Licitra C. Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application. J Lumin. 2021;234(6):117937. https://doi.org/10.1016/j.jlumin.2021.117937.10.1016/j.jlumin.2021.117937 ↗
10. Kou J, Shen CC, Shao H, Che J, Hou X, Chu C, Tian K, Zhang Y, Zhang ZH, Kuo HC. Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes. Opt Express. 2019;27(12):A643–53. https://doi.org/10.1364/OE.27.00A643.10.1364/OE.27.00A643 ↗
11. Tian P, McKendry JJD, Gong Z, Guilhabert B, Watson IM, Gu E, Chen Z, Zhang G, Dawson MD. Size-dependent efciency and efciency droop of blue InGaN micro-light emitting diodes. Appl Phys Lett. 2012;101:231110. https://doi.org/10.1063/1.4769835.10.1063/1.4769835 ↗
12. Noor Elahi AM, Xu J. Electrical and optical modeling of gap-free III-nitride micro-LED arrays. AIP Adv. 2020;10:105028. https://doi.org/10.1063/5.0027809.10.1063/5.0027809 ↗
13. Xu F, Tan Y, Xie Z, Zhang B. Implantation energy- and size-dependent light output of enhanced-efficiency micro-LED arrays fabricated by ion implantation. Opt Express. 2021;29(5):7757–66. https://doi.org/10.1364/OE.421272.10.1364/OE.421272 ↗
14. Ye J, Peng Y, Luo C, Wang H, Zhou X, Guo T, Sun J, Yan Q, Zhang Y, Wu C. Pixelation of GaN based Micro-LED arrays by tailoring injection energy and dose of fluorine ion implantation. J Lumin. 2023;261:119903. https://doi.org/10.1016/j.jlumin.2023.119903.10.1016/j.jlumin.2023.119903 ↗
15. Pan K, Zhang K, Li Y, Li Q, Zhou Y, Yang T, Lin C, Sun J, Zhang Y, Zhou X, Shao J, Guo T, Yan Q. Ultrasmall-sized light-emitting diodes fabricated by ion implantation based on GaN epitaxial wafers with fully activated or unactivated p-GaN. Opt Express. 2024;49(17):4835–8. https://doi.org/10.1364/OL.528884.10.1364/OL.528884 ↗
16. Park J, Choi JH, Kong K, Han JH, Park JH, Kim N, Lee E, Kim D, Kim J, Chung D, Jun S, Kim M, Yoon E, Shin J, Hwang S. Electrically driven midsubmicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses. Nat Photonics. 2021;15(6):449–55. https://doi.org/10.1038/s41566-021-00783-1.10.1038/s41566-021-00783-1 ↗
17. Hsu YH, Wang CH, Lin XD, Lin Y–H, Wuu DS, Horng RH. Improved electrical properties of micro light-emitting diode displays by ion implantation technology. Discover Nano. 2023;18:48. https://doi.org/10.1186/s11671-023-03819-3.10.1186/s11671-023-03819-3 ↗
18. Lin SH, Lo YY, Hsu YH, Lin C-C, Zan H-W, Lin Y-H, Wuu DS, Hsiao CL, Horng RH. Study on different isolation technology on the performance of blue micro-LEDs array applications. Discover Nano. 2024;19:102. https://doi.org/10.1186/s11671-024-04047-z.10.1186/s11671-024-04047-z ↗
19. Hsu YH, Lin SH, Wuu DS, Horng RH. Development of blue-light GaN based micro light-emitting diodes using ion implantation technology. Discover Nano. 2024;19:209. https://doi.org/10.1186/s11671-024-04169-4.10.1186/s11671-024-04169-4 ↗
20. Hsu YC, Tien CH, Chang YH, Mitra S, Shetty S, Chenot S, Khalfioui MA, Kuo HC, Chow CW, Huang CY, Brault J, Horng RH. Performance study of UV micro-LEDs with AlGaN quantum Dots and transparent tunnel junction. Next Nanotechnol. 2025;7:100179. https://doi.org/10.1016/j.nxnano.2025.100179.10.1016/j.nxnano.2025.100179 ↗
21. Hernández A, Kudriavtsev Y, Salinas-Fuentes C, Hernández-Gutierrez C, Asomoza R. Optical properties of porous GaAs formed by low energy ion implantation. Vacuum. 2020;171:108976. https://doi.org/10.1016/j.vacuum.2019.108976.10.1016/j.vacuum.2019.108976 ↗
22. Konoplev SS, Bulashevich KA, Karpov SY. From Large-Size to Micro-LEDs: scaling trends revealed by modeling. Phys Status Solidi A. 2018;215(10):1700508. https://doi.org/10.1002/pssa.201700508.10.1002/pssa.201700508 ↗
23. Park JH, Pristovsek M, Cai W, Cheong H, Kumabe T, Lee DS, Seong TY, Amano H. Interplay of sidewall damage and light extraction efficiency of micro-LEDs. Opt Lett. 2022;47(9):2250–3. https://doi.org/10.1364/OL.456993.10.1364/OL.456993 ↗
24. Park JH, Pristovsek M, Cai W, Cheong H, Tanaka A, Furusawa Y, Han DP, Seong TY, Amano H. Impact of sidewall conditions on internal quantum efficiency and light extraction efficiency of micro-LEDs. Adv Opt Mater. 2023;11(10):2203128. https://doi.org/10.1002/adom.202203128.10.1002/adom.202203128 ↗
25. Lee TY, Huang YM, Chiang H, Chao CL, Hung CY, Kuo WH, Fang YH, Chu MT, Wu CI, Lin CC, Kuo HC. Increase in the efficiency of III-nitride micro leds by atomic layer deposition. Opt Express. 2022;30(11):18552–61. https://doi.org/10.1364/OE.455726.10.1364/OE.455726 ↗
26. Li YY, Lin FZ, Chi KL, Weng SY, Lee GY, Kuo HC, Lin CC. Analysis of size-dependent quantum efficiency in AlGaInP micro–light-emitting diodes with consideration for current leakage. IEEE Photonics J. 2022;14(1):7007907. https://doi.org/10.1109/JPHOT.2021.3138946.10.1109/JPHOT.2021.3138946 ↗
27. Chang HJ, Chiang KH, Jao YM, Wang YC, Shih MH, Kuo HC, Huang JJ, Lin CC. Photonic properties of InGaN-based micro leds in the cryogenic temperature regime. Opt Express. 2024;32(25):44898–907. https://doi.org/10.1364/OE.543951.10.1364/OE.543951 ↗
28. Royo P, Stanley RP, Ilegems M, Streubel K, Gulden KH. Experimental determination of the internal quantum efficiency of AlGaInP microcavity light-emitting diodes. J Appl Phys. 2002;91(5):2563–8. https://doi.org/10.1063/1.1433938.10.1063/1.1433938 ↗
29. Singh KJ, Huang WT, Hsiao FH, Miao WC, Lee TY, Pai YH, Kuo HC. Recent advances in micro-LEDs having yellow–green to red emission wavelengths for visible light communications. Micromachines. 2023;14(2):478. https://doi.org/10.3390/mi14020478.10.3390/mi14020478 ↗
30. Rashidi A, Monavarian M, Aragon A, Rishinaramangalam A, Feezell D. Nonpolar m-plane InGaN/GaN micro-scale light-emitting diode with 1.5 ghz modulation bandwidth. IEEE Electron Device Lett. 2018;39(4):520. https://doi.org/10.1109/led.2018.2803082.10.1109/led.2018.2803082 ↗
31. Chen SWH, Huang YM, Chang YH, Lin Y, Liou FJ, Hsu YC, Song J, Choi J, Chow CW, Lin CC, Horng RH, Chen Z, Han J, Wu T, Kuo HC. High-bandwidth green semipolar (20–21) In- GaN/GaN micro light-emitting diodes for visible light communication. ACS Photon. 2020;7(8):2228. https://doi.org/10.1021/acsphotonics.0c00764.10.1021/acsphotonics.0c00764 ↗