Proton irradiation induced defect analysis in wide-bandgap semiconductors: Optical and structural characterization of SiC and diamond for potential Cherenkov radiators

This study investigates the effects of damage from proton irradiation on large-bandgap semiconductors, including n-type silicon carbide (n-SiC) and diamond (both polycrystalline and monocrystalline). This study involves (i) the implantation of 2 MeV protons at two fluences (5 × 1012 and 5 × 1015 H+/cm2) and (ii) simulations using the Stopping and Range of Ions in Matter software to evaluate the particle concentration depths and defect concentration profiles. In order to complement and extend the simulation results, Raman spectroscopy, photoluminescence, and UV–visible spectroscopy were performed to provide valuable insights into the optical and structural properties of the post-irradiated materials, which can be considered as potential Cherenkov radiator candidates. The results indicate that, under identical irradiation conditions, defects are detected in post-irradiated SiC, as well as in diamond. This suggests that, even at comparable defect concentrations, their detectability strongly depends on the analysis configuration and the underlying mechanisms involved.