journal article·2024-07Open access

Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review (Adv. Electron. Mater. 7/2024)

Kaoru Toko, Shintaro Maeda, Takamitsu Ishiyama, Koki Nozawa, Masayuki Murata, Takashi Suemasu

Advanced Electronic Materials· Volume 10· Issue 7

Abstract

Layer Exchange Synthesis for Flexible Thermoelectric Generators The layer exchange synthesis of SiGe for flexible thermoelectric generators is comprehensively reviewed in article number 2400130 by Kaoru Toko and co-workers. Although SiGe, an environmentally-friendly semiconductor, is the most reliable and widely tested thermoelectric material, it is difficult to form a SiGe layer with high thermoelectric performance at temperatures lower than the heat-proof temperature of flexible plastic films. Metal-induced layer exchange overcomes these challenges.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References

Reference metadata was not supplied for this record.