Procedure Optimization for Organic Ambipolar Transistor: Laterally Aligned Micro n‐/p‐Channels via Dry Soft‐Lithographic Process

Abstract In spite of the large potential of ambipolar transistors constituted of laterally aligned unipolar n‐/p‐channel semiconductors, it is hard to secure the full electrical performance of each semiconductor channel by the risk of intermixing which leads to low crystallinity. Here, a novel fabrication process of patterned taping is proposed which ensures the formation of sharp interface and thus preserving the original performance of individual channels—laterally aligned micro n‐/p‐channels via all‐dry soft‐lithographic process. Different from other bi‐component active layer devices, such as vertically stacked n‐/p‐bilayer and n‐/p‐blend film, laterally aligned n‐/p‐channel of this work secures clear ambipolarity because both the n‐/p‐channels are directly laid over a common gate dielectric surface. Essentially, laterally aligned n‐/p‐channels constructed by patterned taping are free from lateral channel mixing or broadening effect different from other processes such as wet‐processing and fine metal mask (FMM) patterning. In this work, a novel patterned taping method of laterally aligned n‐/p‐channel transistors and also their optimized transistor performances compared with other bi‐component devices using the same set of n‐ and p‐type semiconductor materials is demonstrated.