A Janovec‐Kay‐Dunn‐Like Behavior at Thickness Scaling in Ultra‐Thin Antiferroelectric ZrO₂ Films (Adv. Electron. Mater. 11/2021)

Ultra-High Density Memory Antiferroelectric oxides are a promising candidate for next-generation, ultra-high density memory technologies. However, operating voltage at size reduction, a major criteria for design of miniaturized devices, has remained unaddressed. In article 2100485, Nazanin Bassiri-Gharb, Asif Islam Khan, and colleagues show that the critical polar—antipolar transition voltages in prototypical fluorite-structured antiferroelectric ZrO2 thin films show a –2/3 power law dependence on the average crystallite size, in analogy to the Janovec-Kay-Dunn Law for ferroelectrics.