Suppression of Hot‐Carrier Effects Facilitated by the Multimodal Thin‐Film Transistor Architecture (Adv. Electron. Mater. 9/2021)

Transistor Channel Potential The independent control of multimodal transistor's channel potential reduces deleterious hot carrier effects, which largely occur at the extremities of the conduction areas, with no detrimental effect on drain current magnitude. As a result, a flatter output characteristic is obtained by Radu A. Sporea and colleagues in article number 2100533. Intrinsic gain is improved, with numerous application benefits.