Monolithically Integrated Ultralow Threshold Topological Corner State Nanolasers on Silicon

Taojie Zhou; Jingwen Ma; Mingchu Tang; Haochuan Li; Mickael Martin; Thierry Baron; Huiyun Liu; Siming Chen; Xiankai Sun; Zhaoyu Zhang

doi:10.1021/acsphotonics.2c00711

journal article·2022-12-21Open access

Monolithically Integrated Ultralow Threshold Topological Corner State Nanolasers on Silicon

Taojie Zhou, Jingwen Ma, Mingchu Tang, Haochuan Li, Mickael Martin, Thierry Baron, Huiyun Liu, Siming Chen, Xiankai Sun, Zhaoyu Zhang

ACS Photonics· Volume 9· Issue 12

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Source abstract

Abstract

Monolithic integration of energy-efficient and ultracompact light sources on an industry-standard Si platform has emerged as a promising technology to realize fully integrated Si-based photonic integrated circuits. Recently, semiconductor topological lasers using topologically protected defect modes have received extensive investigation, owing to their unique merits, including robustness against structural imperfections and disorders. However, due to the significant material dissimilarities between Si and III–V materials, previous demonstrations of semiconductor topological lasers have been limited to their native substrates. Here, we experimentally report ultralow threshold, continuous-wave, optically pumped, single-mode, InAs/GaAs quantum dot, topological corner state nanolasers monolithically integrated on a CMOS-compatible Si (001) substrate. Our results represent a new route toward ultracompact and high-performance integrated nanoscale light sources for Si photonics and enable promising applications for topological photonics.

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Research context

Nanomaterials Electronic materials

OpenAlex topics: Photonic and Optical Devices · Photonic Crystals and Applications · Topological Materials and Phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, People’s Republic of China

Department of Electronic and Electrical Engineering, University College London, London, WC1E 7JE, United Kingdom

Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories 999077, Hong Kong

Univ. Grenoble Alpes, CNRS, CEA-LETI, MINATEC, LTM, F-38054 Grenoble, France

Peng Cheng Laboratory, Shenzhen, Guangdong 518066, People’s Republic of China

Funding

Engineering and Physical Sciences Research Council · Royal Academy of Engineering · Agence Nationale de la Recherche · Research Grants Council, University Grants Committee · Shenzhen Fundamental Research Program · Peng Cheng Laboratory · Horizon 2020 Framework Programme · National Natural Science Foundation of China · Shenzhen Key Laboratory Project · Optical Communication Core Chip Research Platform · National Epitaxy Facility

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